Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

Byungha Shin; Justin R. Weber; Rathnait D. Long; Paul K. Hurley; Chris G. Van De Walle; Paul C. McIntyre

doi:10.1063/1.3399776

Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

Byungha Shin
, Justin R. Weber
, Rathnait D. Long
, Paul K. Hurley
, Chris G. Van De Walle
, Paul C. McIntyre

Research output: Contribution to journal › Article › peer-review

Abstract

We report experimental and theoretical studies of defects producing fixed charge within Al₂ O₃ layers grown by atomic layer deposition (ALD) on In_0.53 Ga_0.47 As (001) substrates and the effects of hydrogen passivation of these defects. Capacitance-voltage measurements of Pt/ ALD-Al₂ O₃ / n-In_0.53 Ga_0.47 As suggested the presence of positive bulk fixed charge and negative interfacial fixed charge within ALD-Al₂ O₃. We identified oxygen and aluminum dangling bonds (DBs) as the origin of the fixed charge. First-principles calculations predicted possible passivation of both O and Al DBs, which would neutralize fixed charge, and this prediction was confirmed experimentally; postmetallization forming gas anneal removed most of the fixed charge in ALD-Al₂ O₃.

Original language	English
Article number	152908
Journal	Applied Physics Letters
Volume	96
Issue number	15
DOIs	https://doi.org/10.1063/1.3399776
Publication status	Published - 12 Apr 2010

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10.1063/1.3399776

https://hdl.handle.net/10468/4343Licence: CC BY-NC-ND

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@article{aceaaaf697bb470d997ac3a1f334be8d,

title = "Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates",

abstract = "We report experimental and theoretical studies of defects producing fixed charge within Al2 O3 layers grown by atomic layer deposition (ALD) on In0.53 Ga0.47 As (001) substrates and the effects of hydrogen passivation of these defects. Capacitance-voltage measurements of Pt/ ALD-Al2 O3 / n-In0.53 Ga0.47 As suggested the presence of positive bulk fixed charge and negative interfacial fixed charge within ALD-Al2 O3. We identified oxygen and aluminum dangling bonds (DBs) as the origin of the fixed charge. First-principles calculations predicted possible passivation of both O and Al DBs, which would neutralize fixed charge, and this prediction was confirmed experimentally; postmetallization forming gas anneal removed most of the fixed charge in ALD-Al2 O3.",

author = "Byungha Shin and Weber, \{Justin R.\} and Long, \{Rathnait D.\} and Hurley, \{Paul K.\} and \{Van De Walle\}, \{Chris G.\} and McIntyre, \{Paul C.\}",

year = "2010",

month = apr,

day = "12",

doi = "10.1063/1.3399776",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "15",

}

TY - JOUR

T1 - Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

AU - Shin, Byungha

AU - Weber, Justin R.

AU - Long, Rathnait D.

AU - Hurley, Paul K.

AU - Van De Walle, Chris G.

AU - McIntyre, Paul C.

PY - 2010/4/12

Y1 - 2010/4/12

N2 - We report experimental and theoretical studies of defects producing fixed charge within Al2 O3 layers grown by atomic layer deposition (ALD) on In0.53 Ga0.47 As (001) substrates and the effects of hydrogen passivation of these defects. Capacitance-voltage measurements of Pt/ ALD-Al2 O3 / n-In0.53 Ga0.47 As suggested the presence of positive bulk fixed charge and negative interfacial fixed charge within ALD-Al2 O3. We identified oxygen and aluminum dangling bonds (DBs) as the origin of the fixed charge. First-principles calculations predicted possible passivation of both O and Al DBs, which would neutralize fixed charge, and this prediction was confirmed experimentally; postmetallization forming gas anneal removed most of the fixed charge in ALD-Al2 O3.

AB - We report experimental and theoretical studies of defects producing fixed charge within Al2 O3 layers grown by atomic layer deposition (ALD) on In0.53 Ga0.47 As (001) substrates and the effects of hydrogen passivation of these defects. Capacitance-voltage measurements of Pt/ ALD-Al2 O3 / n-In0.53 Ga0.47 As suggested the presence of positive bulk fixed charge and negative interfacial fixed charge within ALD-Al2 O3. We identified oxygen and aluminum dangling bonds (DBs) as the origin of the fixed charge. First-principles calculations predicted possible passivation of both O and Al DBs, which would neutralize fixed charge, and this prediction was confirmed experimentally; postmetallization forming gas anneal removed most of the fixed charge in ALD-Al2 O3.

UR - https://www.scopus.com/pages/publications/77951612123

U2 - 10.1063/1.3399776

DO - 10.1063/1.3399776

M3 - Article

AN - SCOPUS:77951612123

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 152908

ER -

Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

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