Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs

M. Akhter; P. Pampili; V. Z. Zubialevich; C. Eason; Z. H. Quan; P. P. Maaskant; P. J. Parbrook; B. Corbett

doi:10.1049/el.2014.4253

Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs

M. Akhter
, P. Pampili
, V. Z. Zubialevich
, C. Eason
, Z. H. Quan
, P. P. Maaskant
, P. J. Parbrook
, B. Corbett

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

Bandwidth measurements of deep ultra-violet micro-light-emitting diode (LED) electroluminescence centred at 250 nm using a multiple quantum well aluminium gallium nitride (AlGaN)-based LED structure grown on a sapphire substrate is presented. By controlled etching of the wafer surface, parabolically shaped micro-LED structures were formed to enhance light emission through the substrate. Devices were tested on-wafer and bandwidth measurements were carried out on individual emission peaks from the devices. A bandwidth of more than 20 MHz was achieved on the 250 nm peak.

Original language	English
Pages (from-to)	354-355
Number of pages	2
Journal	Electronics Letters
Volume	51
Issue number	4
DOIs	https://doi.org/10.1049/el.2014.4253
Publication status	Published - 19 Feb 2015

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10.1049/el.2014.4253

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title = "Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs",

abstract = "Bandwidth measurements of deep ultra-violet micro-light-emitting diode (LED) electroluminescence centred at 250 nm using a multiple quantum well aluminium gallium nitride (AlGaN)-based LED structure grown on a sapphire substrate is presented. By controlled etching of the wafer surface, parabolically shaped micro-LED structures were formed to enhance light emission through the substrate. Devices were tested on-wafer and bandwidth measurements were carried out on individual emission peaks from the devices. A bandwidth of more than 20 MHz was achieved on the 250 nm peak.",

author = "M. Akhter and P. Pampili and Zubialevich, \{V. Z.\} and C. Eason and Quan, \{Z. H.\} and Maaskant, \{P. P.\} and Parbrook, \{P. J.\} and B. Corbett",

note = "Publisher Copyright: {\textcopyright} The Institution of Engineering and Technology 2015.",

year = "2015",

month = feb,

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doi = "10.1049/el.2014.4253",

language = "English",

volume = "51",

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journal = "Electronics Letters",

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T1 - Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs

AU - Akhter, M.

AU - Pampili, P.

AU - Zubialevich, V. Z.

AU - Eason, C.

AU - Quan, Z. H.

AU - Maaskant, P. P.

AU - Parbrook, P. J.

AU - Corbett, B.

PY - 2015/2/19

Y1 - 2015/2/19

N2 - Bandwidth measurements of deep ultra-violet micro-light-emitting diode (LED) electroluminescence centred at 250 nm using a multiple quantum well aluminium gallium nitride (AlGaN)-based LED structure grown on a sapphire substrate is presented. By controlled etching of the wafer surface, parabolically shaped micro-LED structures were formed to enhance light emission through the substrate. Devices were tested on-wafer and bandwidth measurements were carried out on individual emission peaks from the devices. A bandwidth of more than 20 MHz was achieved on the 250 nm peak.

AB - Bandwidth measurements of deep ultra-violet micro-light-emitting diode (LED) electroluminescence centred at 250 nm using a multiple quantum well aluminium gallium nitride (AlGaN)-based LED structure grown on a sapphire substrate is presented. By controlled etching of the wafer surface, parabolically shaped micro-LED structures were formed to enhance light emission through the substrate. Devices were tested on-wafer and bandwidth measurements were carried out on individual emission peaks from the devices. A bandwidth of more than 20 MHz was achieved on the 250 nm peak.

UR - https://www.scopus.com/pages/publications/84923046873

U2 - 10.1049/el.2014.4253

DO - 10.1049/el.2014.4253

M3 - Article

AN - SCOPUS:84923046873

SN - 0013-5194

VL - 51

SP - 354

EP - 355

JO - Electronics Letters

JF - Electronics Letters

IS - 4

ER -

Over 20 MHz modulation bandwidth on 250 nm emission of AlGaN micro-LEDs

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