Oxide trapped charge and time to breakdown of pulsed current measurements in the Fowler-Nordheim regime

Andreas Martin; Russell Duane; Paula O'Sullivan; Alan Mathewson

Oxide trapped charge and time to breakdown of pulsed current measurements in the Fowler-Nordheim regime

Andreas Martin
, Russell Duane
, Paula O'Sullivan
, Alan Mathewson

Tyndall IPES (Integrated Power)

University College Cork

Research output: Contribution to conference › Paper › peer-review

Abstract

The feasibility of using pulsed current measurements in characterizing the charge trapping and time-to-breakdown behavior of semiconductor gate oxides is evaluated. MOS gate oxides with thin silica layers are subjected to current stressing and the devices' current-voltage characteristics are measured. Results suggest that the proposed method is not applicable to the quantitative determination of the Q_ox parameter of gate oxides.

Original language	English
Pages	167
Number of pages	1
Publication status	Published - 1996
Event	Proceedings of the 1996 International Integrated Reliability Workshop - Lake Tahoe, CA, USA Duration: 20 Oct 1996 → 23 Oct 1996

Conference

Conference	Proceedings of the 1996 International Integrated Reliability Workshop
City	Lake Tahoe, CA, USA
Period	20/10/96 → 23/10/96

Cite this

@conference{bb5588a6817b4177b0cb04a34f53fe30,

title = "Oxide trapped charge and time to breakdown of pulsed current measurements in the Fowler-Nordheim regime",

abstract = "The feasibility of using pulsed current measurements in characterizing the charge trapping and time-to-breakdown behavior of semiconductor gate oxides is evaluated. MOS gate oxides with thin silica layers are subjected to current stressing and the devices' current-voltage characteristics are measured. Results suggest that the proposed method is not applicable to the quantitative determination of the Qox parameter of gate oxides.",

author = "Andreas Martin and Russell Duane and Paula O'Sullivan and Alan Mathewson",

year = "1996",

language = "English",

pages = "167",

note = "Proceedings of the 1996 International Integrated Reliability Workshop ; Conference date: 20-10-1996 Through 23-10-1996",

}

TY - CONF

T1 - Oxide trapped charge and time to breakdown of pulsed current measurements in the Fowler-Nordheim regime

AU - Martin, Andreas

AU - Duane, Russell

AU - O'Sullivan, Paula

AU - Mathewson, Alan

PY - 1996

Y1 - 1996

N2 - The feasibility of using pulsed current measurements in characterizing the charge trapping and time-to-breakdown behavior of semiconductor gate oxides is evaluated. MOS gate oxides with thin silica layers are subjected to current stressing and the devices' current-voltage characteristics are measured. Results suggest that the proposed method is not applicable to the quantitative determination of the Qox parameter of gate oxides.

AB - The feasibility of using pulsed current measurements in characterizing the charge trapping and time-to-breakdown behavior of semiconductor gate oxides is evaluated. MOS gate oxides with thin silica layers are subjected to current stressing and the devices' current-voltage characteristics are measured. Results suggest that the proposed method is not applicable to the quantitative determination of the Qox parameter of gate oxides.

UR - https://www.scopus.com/pages/publications/0030358501

M3 - Paper

AN - SCOPUS:0030358501

SP - 167

T2 - Proceedings of the 1996 International Integrated Reliability Workshop

Y2 - 20 October 1996 through 23 October 1996

ER -

Oxide trapped charge and time to breakdown of pulsed current measurements in the Fowler-Nordheim regime

Abstract

Conference

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