P-substrate InP-based 1.5 μm lasers using an internal carbon-doped layer to block p-dopant diffusion

P-substrate AlGaInAs/InP lasers are enabled using an internal carbon-doped layer to block Zn-diffusion. These inverted lasers are developed for the aim of further monolithic vertical integration with passive or active material, which would allow full system on-chip integration. The lasers emit at 1.5 μm making them ideal for telecommunication applications. Different p-substrate laser designs were grown to quantify the effect the carbon doped layer had on blocking Zn p-dopants diffusion, which permits the long growths necessary for vertical integration. Current, voltage, and capacitance measurements were used to examine the different laser designs, proving that Zn p-dopant diffusion is responsible for p-substrate laser failure.