TY - GEN
T1 - PCB Design Considerations and Temperature Sensing for Cryo-CMOS
AU - Palma, V. H.Arzate
AU - Wen, Minda
AU - Montanares, Mauricio
AU - Sandoval-Ibarra, F.
AU - Salgado, Gerardo Molina
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - This work presents the design considerations of printed circuit board (PCB) and temperature sensing for cryogenic CMOS (Cryo-CMOS) applications. The PCB operates as expected at cryogenic temperatures showing that its structural design and selected materials build a useful support for using it in Cryo-CMOS. The PCB structure includes a thermal bridge made of oxygen-free high conductivity (OFHC) copper, which has demonstrated high efficiency in thermal transfer. For measuring the temperature of the surface of interest a commercial PT100 temperature sensor was used. The electrical test of an on-chip poly-silicon (poly) resistor is assessed for their possible use as a temperature sensor. From experimental results both, the PT100 and poly-resistor, present a residual resistance that was subtracted from the temperature-dependent resistance model in order to know the resistance value at 4 K. For modeling purposes the PT100 sensor was modeled as a series conection of three resistors by following a piecewise linear approach, while the poly-resistor can be described using a second-order polynomial regression.
AB - This work presents the design considerations of printed circuit board (PCB) and temperature sensing for cryogenic CMOS (Cryo-CMOS) applications. The PCB operates as expected at cryogenic temperatures showing that its structural design and selected materials build a useful support for using it in Cryo-CMOS. The PCB structure includes a thermal bridge made of oxygen-free high conductivity (OFHC) copper, which has demonstrated high efficiency in thermal transfer. For measuring the temperature of the surface of interest a commercial PT100 temperature sensor was used. The electrical test of an on-chip poly-silicon (poly) resistor is assessed for their possible use as a temperature sensor. From experimental results both, the PT100 and poly-resistor, present a residual resistance that was subtracted from the temperature-dependent resistance model in order to know the resistance value at 4 K. For modeling purposes the PT100 sensor was modeled as a series conection of three resistors by following a piecewise linear approach, while the poly-resistor can be described using a second-order polynomial regression.
KW - Cryo-CMOS
KW - experimental data
KW - PCB
KW - poly-silicon resistor
KW - quantum technologies
UR - https://www.scopus.com/pages/publications/85205025710
U2 - 10.1109/MWSCAS60917.2024.10658936
DO - 10.1109/MWSCAS60917.2024.10658936
M3 - Conference proceeding
AN - SCOPUS:85205025710
T3 - Midwest Symposium on Circuits and Systems
SP - 1021
EP - 1025
BT - 2024 IEEE 67th International Midwest Symposium on Circuits and Systems, MWSCAS 2024
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 67th IEEE International Midwest Symposium on Circuits and Systems, MWSCAS 2024
Y2 - 11 August 2024 through 14 August 2024
ER -