PECVD grown SiN photonic crystal micro-domes for the light extraction enhancement of GaN LEDs

M. Genç; V. Sheremet; I. Altuntaş; I. Demir; E. Gür; S. Elagöz; O. Gülseren; U. Özgür; V. Avrutin; H. Morkoç; A. Aydlnll

doi:10.1117/12.2547206

PECVD grown SiN photonic crystal micro-domes for the light extraction enhancement of GaN LEDs

M. Genç
, V. Sheremet
, I. Altuntaş
, I. Demir
, E. Gür
, S. Elagöz
, O. Gülseren
, U. Özgür
, V. Avrutin
, H. Morkoç
, A. Aydlnll

Sabanci University
Ermaksan Optoelectronic R and D Center
Bilkent University
Cumhuriyet University
Ataturk University
Virginia Commonwealth University
Uludag University

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

In this work, the effect of introducing a photonic crystal network of silicon nitride (SiN) micro-domes on the backside of silver coated gallium nitride (GaN) based light emitting diodes (LEDs) was studied. First, sapphire side of the top emitting LEDs, which is the bottom surface of the LEDs, is coated with silver (Ag). Light emitted towards the sapphire substrate is reflected upwards to the top surface and the amount of light extracted from the LED is expected to increase. In an alternative approach, SiN micro-domes forming a two dimensional photonic crystal, 2 μm in diameter and 80 nm in height in average, are deposited on the light emitting surface of the device with a period of 2 μm. Coating the backside with Ag has increased the efficiency of a top emitting LED by 11%. By introducing the SiN photonic crystal onto the Ag backside coated sample, total internal reflection is reduced via scattering and the amount of light emitted has been increased by 30% at 5·10⁴ mA/cm². Integration of SiN micro-domes with Ag coating has significantly impacted light extraction which has been shown to increase the efficiency of GaN based LEDs. Fabrication process and the results are discussed in detail.

Original language	English
Title of host publication	Gallium Nitride Materials and Devices XV
Editors	Hiroshi Fujioka, Hadis Morkoc, Ulrich T. Schwarz
Publisher	SPIE
ISBN (Electronic)	9781510633230
DOIs	https://doi.org/10.1117/12.2547206
Publication status	Published - 2020
Event	Gallium Nitride Materials and Devices XV 2020 - San Francisco, United States Duration: 4 Feb 2020 → 6 Feb 2020

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	11280
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Gallium Nitride Materials and Devices XV 2020
Country/Territory	United States
City	San Francisco
Period	4/02/20 → 6/02/20

Keywords

LED performance
light emitting diodes
Light extraction
SiN micro-domes

Access to Document

10.1117/12.2547206

Cite this

Genç, M., Sheremet, V., Altuntaş, I., Demir, I., Gür, E., Elagöz, S., Gülseren, O., Özgür, U., Avrutin, V., Morkoç, H., & Aydlnll, A. (2020). PECVD grown SiN photonic crystal micro-domes for the light extraction enhancement of GaN LEDs. In H. Fujioka, H. Morkoc, & U. T. Schwarz (Eds.), Gallium Nitride Materials and Devices XV Article 112800O (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11280). SPIE. https://doi.org/10.1117/12.2547206

@inproceedings{8452b8017d6a4de4aa8d61542db28c89,

title = "PECVD grown SiN photonic crystal micro-domes for the light extraction enhancement of GaN LEDs",

abstract = "In this work, the effect of introducing a photonic crystal network of silicon nitride (SiN) micro-domes on the backside of silver coated gallium nitride (GaN) based light emitting diodes (LEDs) was studied. First, sapphire side of the top emitting LEDs, which is the bottom surface of the LEDs, is coated with silver (Ag). Light emitted towards the sapphire substrate is reflected upwards to the top surface and the amount of light extracted from the LED is expected to increase. In an alternative approach, SiN micro-domes forming a two dimensional photonic crystal, 2 μm in diameter and 80 nm in height in average, are deposited on the light emitting surface of the device with a period of 2 μm. Coating the backside with Ag has increased the efficiency of a top emitting LED by 11\%. By introducing the SiN photonic crystal onto the Ag backside coated sample, total internal reflection is reduced via scattering and the amount of light emitted has been increased by 30\% at 5·104 mA/cm2. Integration of SiN micro-domes with Ag coating has significantly impacted light extraction which has been shown to increase the efficiency of GaN based LEDs. Fabrication process and the results are discussed in detail.",

keywords = "LED performance, light emitting diodes, Light extraction, SiN micro-domes",

author = "M. Gen{\c c} and V. Sheremet and I. Altunta{\c s} and I. Demir and E. G{\"u}r and S. Elag{\"o}z and O. G{\"u}lseren and U. {\"O}zg{\"u}r and V. Avrutin and H. Morko{\c c} and A. Aydlnll",

note = "Publisher Copyright: {\textcopyright} 2020 SPIE.; Gallium Nitride Materials and Devices XV 2020 ; Conference date: 04-02-2020 Through 06-02-2020",

year = "2020",

doi = "10.1117/12.2547206",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Hiroshi Fujioka and Hadis Morkoc and Schwarz, \{Ulrich T.\}",

booktitle = "Gallium Nitride Materials and Devices XV",

address = "United States",

}

Genç, M, Sheremet, V, Altuntaş, I, Demir, I, Gür, E, Elagöz, S, Gülseren, O, Özgür, U, Avrutin, V, Morkoç, H & Aydlnll, A 2020, PECVD grown SiN photonic crystal micro-domes for the light extraction enhancement of GaN LEDs. in H Fujioka, H Morkoc & UT Schwarz (eds), Gallium Nitride Materials and Devices XV., 112800O, Proceedings of SPIE - The International Society for Optical Engineering, vol. 11280, SPIE, Gallium Nitride Materials and Devices XV 2020, San Francisco, United States, 4/02/20. https://doi.org/10.1117/12.2547206

PECVD grown SiN photonic crystal micro-domes for the light extraction enhancement of GaN LEDs. / Genç, M.; Sheremet, V.; Altuntaş, I. et al.
Gallium Nitride Materials and Devices XV. ed. / Hiroshi Fujioka; Hadis Morkoc; Ulrich T. Schwarz. SPIE, 2020. 112800O (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11280).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - PECVD grown SiN photonic crystal micro-domes for the light extraction enhancement of GaN LEDs

AU - Genç, M.

AU - Sheremet, V.

AU - Altuntaş, I.

AU - Demir, I.

AU - Gür, E.

AU - Elagöz, S.

AU - Gülseren, O.

AU - Özgür, U.

AU - Avrutin, V.

AU - Morkoç, H.

AU - Aydlnll, A.

PY - 2020

Y1 - 2020

N2 - In this work, the effect of introducing a photonic crystal network of silicon nitride (SiN) micro-domes on the backside of silver coated gallium nitride (GaN) based light emitting diodes (LEDs) was studied. First, sapphire side of the top emitting LEDs, which is the bottom surface of the LEDs, is coated with silver (Ag). Light emitted towards the sapphire substrate is reflected upwards to the top surface and the amount of light extracted from the LED is expected to increase. In an alternative approach, SiN micro-domes forming a two dimensional photonic crystal, 2 μm in diameter and 80 nm in height in average, are deposited on the light emitting surface of the device with a period of 2 μm. Coating the backside with Ag has increased the efficiency of a top emitting LED by 11%. By introducing the SiN photonic crystal onto the Ag backside coated sample, total internal reflection is reduced via scattering and the amount of light emitted has been increased by 30% at 5·104 mA/cm2. Integration of SiN micro-domes with Ag coating has significantly impacted light extraction which has been shown to increase the efficiency of GaN based LEDs. Fabrication process and the results are discussed in detail.

AB - In this work, the effect of introducing a photonic crystal network of silicon nitride (SiN) micro-domes on the backside of silver coated gallium nitride (GaN) based light emitting diodes (LEDs) was studied. First, sapphire side of the top emitting LEDs, which is the bottom surface of the LEDs, is coated with silver (Ag). Light emitted towards the sapphire substrate is reflected upwards to the top surface and the amount of light extracted from the LED is expected to increase. In an alternative approach, SiN micro-domes forming a two dimensional photonic crystal, 2 μm in diameter and 80 nm in height in average, are deposited on the light emitting surface of the device with a period of 2 μm. Coating the backside with Ag has increased the efficiency of a top emitting LED by 11%. By introducing the SiN photonic crystal onto the Ag backside coated sample, total internal reflection is reduced via scattering and the amount of light emitted has been increased by 30% at 5·104 mA/cm2. Integration of SiN micro-domes with Ag coating has significantly impacted light extraction which has been shown to increase the efficiency of GaN based LEDs. Fabrication process and the results are discussed in detail.

KW - LED performance

KW - light emitting diodes

KW - Light extraction

KW - SiN micro-domes

UR - https://www.scopus.com/pages/publications/85082660745

U2 - 10.1117/12.2547206

DO - 10.1117/12.2547206

M3 - Conference proceeding

AN - SCOPUS:85082660745

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Gallium Nitride Materials and Devices XV

A2 - Fujioka, Hiroshi

A2 - Morkoc, Hadis

A2 - Schwarz, Ulrich T.

PB - SPIE

T2 - Gallium Nitride Materials and Devices XV 2020

Y2 - 4 February 2020 through 6 February 2020

ER -

PECVD grown SiN photonic crystal micro-domes for the light extraction enhancement of GaN LEDs

Abstract

Publication series

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Keywords

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