Abstract
The performance of selected, commercially available InGaAs/InP avalanche photodiodes operating in a photon-counting mode at an incident wavelength of 1.55 mm is described. A discussion on the optimum operating conditions and their relationship to the electric field distribution within the device is presented.
| Original language | English |
|---|---|
| Pages (from-to) | 6818-6829 |
| Number of pages | 12 |
| Journal | Applied Optics |
| Volume | 39 |
| Issue number | 36 |
| DOIs | |
| Publication status | Published - 20 Dec 2000 |
| Externally published | Yes |