Performance and leakage optimization in carbon and fluorine co-implanted pMOSFETs

B. J. Pawlak; R. Duffy; J. C. Hooker; T. Hoffman; S. B. Felch; P. Eyben; P. Absil; S. Biesemans; R. J.P. Lander

doi:10.1109/VTSA.2008.4530784

Performance and leakage optimization in carbon and fluorine co-implanted pMOSFETs

B. J. Pawlak
, R. Duffy
, J. C. Hooker
, T. Hoffman
, S. B. Felch
, P. Eyben
, P. Absil
, S. Biesemans
, R. J.P. Lander

NXP-TSMC Research Center
Interuniversitair Micro-Elektronica Centrum
Applied Materials Incorporated

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

In this work we demonstrate that effective tailoring of the extension junction in MOS devices with C co-implantation must be accompanied by re-optimization of the deep HDD (HDD+) profile and spacer dimensions. In this way junction and doping profile optimization can successfully improve short channel effect (SCE) control, without penalty in performance or junction leakage.

Original language	English
Title of host publication	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Pages	30-31
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2008.4530784
Publication status	Published - 2008
Externally published	Yes
Event	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan, Province of China Duration: 21 Apr 2008 → 23 Apr 2008

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	21/04/08 → 23/04/08

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10.1109/VTSA.2008.4530784

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Pawlak, B. J., Duffy, R., Hooker, J. C., Hoffman, T., Felch, S. B., Eyben, P., Absil, P., Biesemans, S., & Lander, R. J. P. (2008). Performance and leakage optimization in carbon and fluorine co-implanted pMOSFETs. In 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA (pp. 30-31). Article 4530784 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2008.4530784

@inproceedings{2c60f3df9a144d1da840e070cadb72e5,

title = "Performance and leakage optimization in carbon and fluorine co-implanted pMOSFETs",

abstract = "In this work we demonstrate that effective tailoring of the extension junction in MOS devices with C co-implantation must be accompanied by re-optimization of the deep HDD (HDD+) profile and spacer dimensions. In this way junction and doping profile optimization can successfully improve short channel effect (SCE) control, without penalty in performance or junction leakage.",

author = "Pawlak, \{B. J.\} and R. Duffy and Hooker, \{J. C.\} and T. Hoffman and Felch, \{S. B.\} and P. Eyben and P. Absil and S. Biesemans and Lander, \{R. J.P.\}",

year = "2008",

doi = "10.1109/VTSA.2008.4530784",

language = "English",

isbn = "9781424416158",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "30--31",

booktitle = "2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA",

note = "2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA ; Conference date: 21-04-2008 Through 23-04-2008",

}

Pawlak, BJ, Duffy, R, Hooker, JC, Hoffman, T, Felch, SB, Eyben, P, Absil, P, Biesemans, S & Lander, RJP 2008, Performance and leakage optimization in carbon and fluorine co-implanted pMOSFETs. in 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA., 4530784, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 30-31, 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA, Hsinchu, Taiwan, Province of China, 21/04/08. https://doi.org/10.1109/VTSA.2008.4530784

Performance and leakage optimization in carbon and fluorine co-implanted pMOSFETs. / Pawlak, B. J.; Duffy, R.; Hooker, J. C. et al.
2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. 2008. p. 30-31 4530784 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Performance and leakage optimization in carbon and fluorine co-implanted pMOSFETs

AU - Pawlak, B. J.

AU - Duffy, R.

AU - Hooker, J. C.

AU - Hoffman, T.

AU - Felch, S. B.

AU - Eyben, P.

AU - Absil, P.

AU - Biesemans, S.

AU - Lander, R. J.P.

PY - 2008

Y1 - 2008

N2 - In this work we demonstrate that effective tailoring of the extension junction in MOS devices with C co-implantation must be accompanied by re-optimization of the deep HDD (HDD+) profile and spacer dimensions. In this way junction and doping profile optimization can successfully improve short channel effect (SCE) control, without penalty in performance or junction leakage.

AB - In this work we demonstrate that effective tailoring of the extension junction in MOS devices with C co-implantation must be accompanied by re-optimization of the deep HDD (HDD+) profile and spacer dimensions. In this way junction and doping profile optimization can successfully improve short channel effect (SCE) control, without penalty in performance or junction leakage.

UR - https://www.scopus.com/pages/publications/49049094208

U2 - 10.1109/VTSA.2008.4530784

DO - 10.1109/VTSA.2008.4530784

M3 - Conference proceeding

AN - SCOPUS:49049094208

SN - 9781424416158

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

SP - 30

EP - 31

BT - 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA

T2 - 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA

Y2 - 21 April 2008 through 23 April 2008

ER -

Pawlak BJ, Duffy R, Hooker JC, Hoffman T, Felch SB, Eyben P et al. Performance and leakage optimization in carbon and fluorine co-implanted pMOSFETs. In 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. 2008. p. 30-31. 4530784. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2008.4530784

Performance and leakage optimization in carbon and fluorine co-implanted pMOSFETs

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