Performance and reliability in back-gated CVD-grown MoS2 devices

Carlos Marquez; Norberto Salazar; Farzan Gity; Jose C. Galdon; Carlos Navarro; Ray Duffy; Paul Hurley; Francisco Gamiz

doi:10.1016/j.sse.2021.108173

Performance and reliability in back-gated CVD-grown MoS₂ devices

Carlos Marquez
, Norberto Salazar
, Farzan Gity
, Jose C. Galdon
, Carlos Navarro
, Ray Duffy
, Paul Hurley
, Francisco Gamiz

University of Granada
Technical University of Madrid

Research output: Contribution to journal › Article › peer-review

Abstract

In this work, the electrical performance and reliability of as-synthesized CVD-grown MoS₂ transistors directly grown on SiO₂/Si substrate without any transfer process have been evaluated. Transfer and output characteristics, current hysteresis, capacitance-voltage and low-frequency noise signatures have been characterized revealing the huge influence of surface and oxide defects and the disturbance due to the fluctuations of the carrier number on the back-gated transistor response.

Original language	English
Article number	108173
Journal	Solid-State Electronics
Volume	186
DOIs	https://doi.org/10.1016/j.sse.2021.108173
Publication status	Published - Dec 2021

Keywords

Low-frequency noise
Molybdenum disulfide
More than Moore
MoS
Reliability
Transition metal dichalcogenide
Two-dimensional materials

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10.1016/j.sse.2021.108173

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title = "Performance and reliability in back-gated CVD-grown MoS2 devices",

abstract = "In this work, the electrical performance and reliability of as-synthesized CVD-grown MoS2 transistors directly grown on SiO2/Si substrate without any transfer process have been evaluated. Transfer and output characteristics, current hysteresis, capacitance-voltage and low-frequency noise signatures have been characterized revealing the huge influence of surface and oxide defects and the disturbance due to the fluctuations of the carrier number on the back-gated transistor response.",

keywords = "Low-frequency noise, Molybdenum disulfide, More than Moore, MoS, Reliability, Transition metal dichalcogenide, Two-dimensional materials",

author = "Carlos Marquez and Norberto Salazar and Farzan Gity and Galdon, \{Jose C.\} and Carlos Navarro and Ray Duffy and Paul Hurley and Francisco Gamiz",

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year = "2021",

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doi = "10.1016/j.sse.2021.108173",

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T1 - Performance and reliability in back-gated CVD-grown MoS2 devices

AU - Marquez, Carlos

AU - Salazar, Norberto

AU - Gity, Farzan

AU - Galdon, Jose C.

AU - Navarro, Carlos

AU - Duffy, Ray

AU - Hurley, Paul

AU - Gamiz, Francisco

PY - 2021/12

Y1 - 2021/12

N2 - In this work, the electrical performance and reliability of as-synthesized CVD-grown MoS2 transistors directly grown on SiO2/Si substrate without any transfer process have been evaluated. Transfer and output characteristics, current hysteresis, capacitance-voltage and low-frequency noise signatures have been characterized revealing the huge influence of surface and oxide defects and the disturbance due to the fluctuations of the carrier number on the back-gated transistor response.

AB - In this work, the electrical performance and reliability of as-synthesized CVD-grown MoS2 transistors directly grown on SiO2/Si substrate without any transfer process have been evaluated. Transfer and output characteristics, current hysteresis, capacitance-voltage and low-frequency noise signatures have been characterized revealing the huge influence of surface and oxide defects and the disturbance due to the fluctuations of the carrier number on the back-gated transistor response.

KW - Low-frequency noise

KW - Molybdenum disulfide

KW - More than Moore

KW - MoS

KW - Reliability

KW - Transition metal dichalcogenide

KW - Two-dimensional materials

UR - https://www.scopus.com/pages/publications/85113609742

U2 - 10.1016/j.sse.2021.108173

DO - 10.1016/j.sse.2021.108173

M3 - Article

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SN - 0038-1101

VL - 186

JO - Solid-State Electronics

JF - Solid-State Electronics

M1 - 108173

ER -

Performance and reliability in back-gated CVD-grown MoS₂ devices

Abstract

Keywords

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