Performance and reliability of post-CMOS metal/oxide MEMS for RF application

Engineering

• Microelectromechanical System 100%
• Nitride 100%
• Test Structure 100%
• Operating Characteristic 100%
• Passivation 50%
• Dielectrics 50%
• Bulk Material 50%
• Repeatability 50%
• Complementary Metal-Oxide-Semiconductor 50%
• Modulus of Elasticity 50%
• Actuation 50%
• Residual Stress 50%
• Mechanical Structure 50%
• Process Condition 50%
• Stress Gradient 50%
• Electrostatic Actuation 50%
• Elastic Stress 50%

Material Science

• Microelectromechanical System 100%
• Metal Oxide 100%
• Charge Trapping 100%
• Nitride Compound 66%
• Film 33%
• Composite Material 33%
• Materials Property 33%
• Complementary Metal-Oxide-Semiconductor Device 33%
• Elastic Moduli 33%
• Dielectric Property 33%
• Residual Stress 33%