Performance Evaluation of a Quasi-TM Mode Silicon Optical Modulator

  • Darpan Mishra
  • , Manoranjan Minz
  • , Ramesh Kumar Sonkar

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

This paper investigates the performance of a silicon Mach-Zehnder modulator (MZM) employing quasi-TM mode propagation. A comparison of the quasi-TM MZM with quasi-TE MZM shows better performance of the quasi-TM modulator. The quasi-TM PN phase shifter analysis, modulator transfer characteristics, traveling wave electrode design, and high-speed characteristics have been determined. The designed quasi-TM MZM can achieve 36 Gbps error-free operation at 4 Vpp driving voltage under 2 V reverse bias with non-return-to-zero on-off keying. The 3 dB modulation bandwidth of the designed quasi-TM traveling wave MZM is 20 GHz at -2 V.

Original languageEnglish
Title of host publication2020 IEEE Region 10 Symposium, TENSYMP 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages202-205
Number of pages4
ISBN (Electronic)9781728173665
DOIs
Publication statusPublished - 5 Jun 2020
Externally publishedYes
Event2020 IEEE Region 10 Symposium, TENSYMP 2020 - Virtual, Dhaka, Bangladesh
Duration: 5 Jun 20207 Jun 2020

Publication series

Name2020 IEEE Region 10 Symposium, TENSYMP 2020

Conference

Conference2020 IEEE Region 10 Symposium, TENSYMP 2020
Country/TerritoryBangladesh
CityVirtual, Dhaka
Period5/06/207/06/20

Keywords

  • Mach-Zehnder modulator
  • quasi-TM mode
  • silicon
  • traveling wave

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