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Performance investigation of short-channel junctionless multigate transistors

  • P. Razavi
  • , G. Fagas
  • , I. Ferain
  • , N. Dehdashti Akhavan
  • , R. Yu
  • , J. P. Colinge

Research output: Chapter in Book/Report/Conference proceedingsConference proceedingpeer-review

Abstract

In this paper we investigate the performance of short channel junctionless gate-all-around (GAA) transistors, by comparing the I-V characteristics, subthreshold swing and drain-induced barrier lowring (DIBL) of junctionless GAA transistors with accumulation-mode GAA transistors. We also compare the I-V characteristics of junctionless GAA transistors for different wafer and transport orientations. MuGFETs are investigated for different wafer and channel orientation.

Original languageEnglish
Title of host publication2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011
Pages122-125
Number of pages4
DOIs
Publication statusPublished - 2011
Event2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011 - Cork, Ireland
Duration: 14 Mar 201116 Mar 2011

Publication series

Name2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011

Conference

Conference2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011
Country/TerritoryIreland
CityCork
Period14/03/1116/03/11

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