Performance of 22 nm tri-gate junctionless nanowire transistors at elevated temperatures

In this letter, we report the high-temperature performance of silicon-on-insulator (SOI) junctionless (JL) multigate transistors with a 22 nm gate length. The n-MOS and p-MOS transistors have 5.4 and 4.9 uA ON current (I_ON) with 2.4 and 4.8 pA off-state leakage current, respectively, under 0.9 V at a temperature of 473 K. At the temperature, they exhibit a record ION/IOFF (10^ON) value for scaled devices. The temperature dependence of the threshold voltage is also analyzed. The subthreshold slope is 111 mV/dec at 473 K for n-MOS with a 1 × 1019 cm ^-3) channel doping, which confirms the good electrostatics gate control.