Phase and surface roughness evolution for as-deposited LPCVD silicon films

C. Cobianu; Rodica Plugaru; Nicoleta Nastase; S. Nastase; C. Flueraru; M. Modreanu; J. Adamczevska; W. Paszkowicz; J. Auleytner; P. Cosmin

Phase and surface roughness evolution for as-deposited LPCVD silicon films

C. Cobianu
, Rodica Plugaru
, Nicoleta Nastase
, S. Nastase
, C. Flueraru
, M. Modreanu
, J. Adamczevska
, W. Paszkowicz
, J. Auleytner
, P. Cosmin

National Institute for Research and Development in Microtechnologies Romania

Research output: Contribution to conference › Paper › peer-review

Abstract

Within this paper we present a simultaneous investigation of the phase evolution (XRD studies) and surface roughness (AFM investigations) of as-deposited low pressure chemically vapor deposited (LPCVD) silicon films prepared by silane decomposition in a large range of deposition temperatures (500-615 °C) and pressure (20-100 Pa). We show for the first time that a crystalline state of LPCVD silicon layer (of 〈211〉 texture) can be obtained at temperatures as low as 500 °C, while its evolution depends on deposition pressure. For a deposition temperature equal to 550 °C an amorphous state is revealed independent of deposition pressure used and this was related to a minimum value of the surface roughness (below 1 nm).

Original language	English
Pages	201-204
Number of pages	4
Publication status	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 International Semiconductor Conference (CAS '99) - Sinaia, Romania Duration: 5 Oct 1999 → 9 Oct 1999

Conference

Conference	Proceedings of the 1999 International Semiconductor Conference (CAS '99)
City	Sinaia, Romania
Period	5/10/99 → 9/10/99

Cite this

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title = "Phase and surface roughness evolution for as-deposited LPCVD silicon films",

abstract = "Within this paper we present a simultaneous investigation of the phase evolution (XRD studies) and surface roughness (AFM investigations) of as-deposited low pressure chemically vapor deposited (LPCVD) silicon films prepared by silane decomposition in a large range of deposition temperatures (500-615 °C) and pressure (20-100 Pa). We show for the first time that a crystalline state of LPCVD silicon layer (of 〈211〉 texture) can be obtained at temperatures as low as 500 °C, while its evolution depends on deposition pressure. For a deposition temperature equal to 550 °C an amorphous state is revealed independent of deposition pressure used and this was related to a minimum value of the surface roughness (below 1 nm).",

author = "C. Cobianu and Rodica Plugaru and Nicoleta Nastase and S. Nastase and C. Flueraru and M. Modreanu and J. Adamczevska and W. Paszkowicz and J. Auleytner and P. Cosmin",

year = "1999",

language = "English",

pages = "201--204",

note = "Proceedings of the 1999 International Semiconductor Conference (CAS '99) ; Conference date: 05-10-1999 Through 09-10-1999",

}

TY - CONF

T1 - Phase and surface roughness evolution for as-deposited LPCVD silicon films

AU - Cobianu, C.

AU - Plugaru, Rodica

AU - Nastase, Nicoleta

AU - Nastase, S.

AU - Flueraru, C.

AU - Modreanu, M.

AU - Adamczevska, J.

AU - Paszkowicz, W.

AU - Auleytner, J.

AU - Cosmin, P.

PY - 1999

Y1 - 1999

N2 - Within this paper we present a simultaneous investigation of the phase evolution (XRD studies) and surface roughness (AFM investigations) of as-deposited low pressure chemically vapor deposited (LPCVD) silicon films prepared by silane decomposition in a large range of deposition temperatures (500-615 °C) and pressure (20-100 Pa). We show for the first time that a crystalline state of LPCVD silicon layer (of 〈211〉 texture) can be obtained at temperatures as low as 500 °C, while its evolution depends on deposition pressure. For a deposition temperature equal to 550 °C an amorphous state is revealed independent of deposition pressure used and this was related to a minimum value of the surface roughness (below 1 nm).

AB - Within this paper we present a simultaneous investigation of the phase evolution (XRD studies) and surface roughness (AFM investigations) of as-deposited low pressure chemically vapor deposited (LPCVD) silicon films prepared by silane decomposition in a large range of deposition temperatures (500-615 °C) and pressure (20-100 Pa). We show for the first time that a crystalline state of LPCVD silicon layer (of 〈211〉 texture) can be obtained at temperatures as low as 500 °C, while its evolution depends on deposition pressure. For a deposition temperature equal to 550 °C an amorphous state is revealed independent of deposition pressure used and this was related to a minimum value of the surface roughness (below 1 nm).

UR - https://www.scopus.com/pages/publications/0033340387

M3 - Paper

AN - SCOPUS:0033340387

SP - 201

EP - 204

T2 - Proceedings of the 1999 International Semiconductor Conference (CAS '99)

Y2 - 5 October 1999 through 9 October 1999

ER -

Phase and surface roughness evolution for as-deposited LPCVD silicon films

Abstract

Conference

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