Phosphate coating for varistor and method

Caroline Clinton; Trevor R Spalding; Andrew Mark Connell; John Barrett; James F Rohan

Phosphate coating for varistor and method

Caroline Clinton (Inventor), Trevor R Spalding (Inventor), Andrew Mark Connell (Inventor), John Barrett (Inventor), James F Rohan (Inventor)

Tyndall MicroNano Systems

Littelfuse Inc

Research output: Patent

Abstract

A method of providing a semiconductor device with a selectively deposited inorganic electrically insulative layer, the device having exposed semiconductor surfaces and electrically conductive metal end terminations, in which the device is saturated in a phosphoric acid solution to form a phosphate layer on the exposed surfaces of the semiconductor but not on the metal end terminations. The device is thereafter plated by a conventional plating process and the plating is provided only on the end terminations.

Original language	English
Patent number	US6214685
IPC	H01C 7/ 18 A I
Priority date	2/07/98
Publication status	Published - 10 Apr 2001

Cite this

@misc{7b146c7c97aa4c13a15235f1903e129f,

title = "Phosphate coating for varistor and method",

abstract = "A method of providing a semiconductor device with a selectively deposited inorganic electrically insulative layer, the device having exposed semiconductor surfaces and electrically conductive metal end terminations, in which the device is saturated in a phosphoric acid solution to form a phosphate layer on the exposed surfaces of the semiconductor but not on the metal end terminations. The device is thereafter plated by a conventional plating process and the plating is provided only on the end terminations.",

author = "Caroline Clinton and Spalding, \{Trevor R\} and Connell, \{Andrew Mark\} and John Barrett and Rohan, \{James F\}",

year = "2001",

month = apr,

day = "10",

language = "English",

type = "Patent",

note = "US6214685; H01C 7/ 18 A I",

}

TY - PAT

T1 - Phosphate coating for varistor and method

AU - Clinton, Caroline

AU - Spalding, Trevor R

AU - Connell, Andrew Mark

AU - Barrett, John

AU - Rohan, James F

PY - 2001/4/10

Y1 - 2001/4/10

N2 - A method of providing a semiconductor device with a selectively deposited inorganic electrically insulative layer, the device having exposed semiconductor surfaces and electrically conductive metal end terminations, in which the device is saturated in a phosphoric acid solution to form a phosphate layer on the exposed surfaces of the semiconductor but not on the metal end terminations. The device is thereafter plated by a conventional plating process and the plating is provided only on the end terminations.

AB - A method of providing a semiconductor device with a selectively deposited inorganic electrically insulative layer, the device having exposed semiconductor surfaces and electrically conductive metal end terminations, in which the device is saturated in a phosphoric acid solution to form a phosphate layer on the exposed surfaces of the semiconductor but not on the metal end terminations. The device is thereafter plated by a conventional plating process and the plating is provided only on the end terminations.

M3 - Patent

M1 - US6214685

ER -

Phosphate coating for varistor and method

Abstract

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