TY - GEN
T1 - Phosphorus in the polysilicon TiSi2system
T2 - 25th European Solid State Device Research Conference, ESSDERC 1995
AU - Kalnitsky, Alex
AU - Hurley, Paul
AU - Lepert, Arnaud
AU - Mallardeau, Catherine
AU - Sheehan, Eoin
AU - Mathewson, Alan
N1 - Publisher Copyright:
© 1995 Editions Frontieres.
PY - 1995
Y1 - 1995
N2 - This work provides direct evidence of a significant reduction in the concentration of phosphorus in silicided polysilicon, due to post-TiSi2formation at typical process temperatures (e.g BPSG deposition/densification). The phosphorus loss is a thermally activated process, with an activation energy of 1.26 eV, as evidenced by isochronal anneals in the temperature range 750 to 950°C. The reduction in the phosphorus concentration for given anneal conditions is shown to be proportional to the initial concentration in the polysilicon film. Comparison of chemical (SIMS) and electrically active phosphorus concentrations (from CV analysis) yields the percentage of active impurities for various process conditions. The relevance of these new findings to the performance of submicron MOSFETs (i.e., polysilicon depletion effects), and to the voltage linearity of integrated capacitors is discussed.
AB - This work provides direct evidence of a significant reduction in the concentration of phosphorus in silicided polysilicon, due to post-TiSi2formation at typical process temperatures (e.g BPSG deposition/densification). The phosphorus loss is a thermally activated process, with an activation energy of 1.26 eV, as evidenced by isochronal anneals in the temperature range 750 to 950°C. The reduction in the phosphorus concentration for given anneal conditions is shown to be proportional to the initial concentration in the polysilicon film. Comparison of chemical (SIMS) and electrically active phosphorus concentrations (from CV analysis) yields the percentage of active impurities for various process conditions. The relevance of these new findings to the performance of submicron MOSFETs (i.e., polysilicon depletion effects), and to the voltage linearity of integrated capacitors is discussed.
UR - https://www.scopus.com/pages/publications/84920747340
M3 - Conference proceeding
AN - SCOPUS:84920747340
SN - 9782863321829
T3 - European Solid-State Device Research Conference
SP - 371
EP - 374
BT - ESSDERC 1995 - Proceedings of the 25th European Solid State Device Research Conference
A2 - de Graaff, Henk C.
A2 - de Graaff, Henk C.
A2 - van Kranenburg, Herma
PB - IEEE Computer Society
Y2 - 25 September 1995 through 27 September 1995
ER -