Photoconductive properties of Bi2S3 nanowires

J. Andzane; G. Kunakova; J. Varghese; J. D. Holmes; D. Erts

doi:10.1063/1.4907867

Photoconductive properties of Bi₂S₃ nanowires

J. Andzane
, G. Kunakova
, J. Varghese
, J. D. Holmes
, D. Erts

School of Chemistry

Research output: Contribution to journal › Article › peer-review

Abstract

The photoconductive properties of Bi₂S₃ nanowires synthesized inside anodized alumina (AAO) membrane have been characterized as a function of illuminating photon energy between the wavelengths of 500 to 900 nm and at constant illumination intensity of 1-4 μW·cm^-2. Photoconductivity spectra, photocurrent values, photocurrent onset/decay times of individual Bi₂S₃ nanowires liberated from the AAO membrane were determined and compared with those of arrays of as-produced Bi₂S₃ nanowires templated inside pores of AAO membrane. The alumina membrane was found to significantly influence the photoconductive properties of the AAO-hosted Bi₂S₃ nanowires, when compared to liberated from the AAO membrane individual Bi₂S₃ nanowires, possibly due to charge carrier trapping at the interface between the nanowire surface and the pore walls.

Original language	English
Article number	064305
Journal	Journal of Applied Physics
Volume	117
Issue number	6
DOIs	https://doi.org/10.1063/1.4907867
Publication status	Published - 14 Feb 2015

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10.1063/1.4907867

https://hdl.handle.net/10468/2220Licence: CC BY

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@article{116e900815ac4109994bfda54cf0c2f6,

title = "Photoconductive properties of Bi2S3 nanowires",

abstract = "The photoconductive properties of Bi2S3 nanowires synthesized inside anodized alumina (AAO) membrane have been characterized as a function of illuminating photon energy between the wavelengths of 500 to 900 nm and at constant illumination intensity of 1-4 μW·cm-2. Photoconductivity spectra, photocurrent values, photocurrent onset/decay times of individual Bi2S3 nanowires liberated from the AAO membrane were determined and compared with those of arrays of as-produced Bi2S3 nanowires templated inside pores of AAO membrane. The alumina membrane was found to significantly influence the photoconductive properties of the AAO-hosted Bi2S3 nanowires, when compared to liberated from the AAO membrane individual Bi2S3 nanowires, possibly due to charge carrier trapping at the interface between the nanowire surface and the pore walls.",

author = "J. Andzane and G. Kunakova and J. Varghese and Holmes, \{J. D.\} and D. Erts",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

year = "2015",

month = feb,

day = "14",

doi = "10.1063/1.4907867",

language = "English",

volume = "117",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Photoconductive properties of Bi2S3 nanowires

AU - Andzane, J.

AU - Kunakova, G.

AU - Varghese, J.

AU - Holmes, J. D.

AU - Erts, D.

PY - 2015/2/14

Y1 - 2015/2/14

N2 - The photoconductive properties of Bi2S3 nanowires synthesized inside anodized alumina (AAO) membrane have been characterized as a function of illuminating photon energy between the wavelengths of 500 to 900 nm and at constant illumination intensity of 1-4 μW·cm-2. Photoconductivity spectra, photocurrent values, photocurrent onset/decay times of individual Bi2S3 nanowires liberated from the AAO membrane were determined and compared with those of arrays of as-produced Bi2S3 nanowires templated inside pores of AAO membrane. The alumina membrane was found to significantly influence the photoconductive properties of the AAO-hosted Bi2S3 nanowires, when compared to liberated from the AAO membrane individual Bi2S3 nanowires, possibly due to charge carrier trapping at the interface between the nanowire surface and the pore walls.

AB - The photoconductive properties of Bi2S3 nanowires synthesized inside anodized alumina (AAO) membrane have been characterized as a function of illuminating photon energy between the wavelengths of 500 to 900 nm and at constant illumination intensity of 1-4 μW·cm-2. Photoconductivity spectra, photocurrent values, photocurrent onset/decay times of individual Bi2S3 nanowires liberated from the AAO membrane were determined and compared with those of arrays of as-produced Bi2S3 nanowires templated inside pores of AAO membrane. The alumina membrane was found to significantly influence the photoconductive properties of the AAO-hosted Bi2S3 nanowires, when compared to liberated from the AAO membrane individual Bi2S3 nanowires, possibly due to charge carrier trapping at the interface between the nanowire surface and the pore walls.

UR - https://www.scopus.com/pages/publications/84923667291

U2 - 10.1063/1.4907867

DO - 10.1063/1.4907867

M3 - Article

AN - SCOPUS:84923667291

SN - 0021-8979

VL - 117

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

M1 - 064305

ER -

Photoconductive properties of Bi₂S₃ nanowires

Abstract

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