Photoelectrochernical etching of n-GaAs(001) electrodes studied using reflectance anisotropy

S. R. Armstrong; M. E. Pemble; A. R. Turner

doi:10.1016/0039-6028(94)91534-2

Photoelectrochernical etching of n-GaAs(001) electrodes studied using reflectance anisotropy

S. R. Armstrong
, M. E. Pemble
, A. R. Turner

University of Manchester

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate here that the novel "epioptic" technique of reflectance anisotropy (RA) is capable of detecting in real time, variations in the optical anisotropy of an GaAs(001) electrode surface during anodic oxidation in aqueous KCl solutions. A novel system is described in which the exciting probe laser beam also excites minority charge carriers (holes) in the n-type materials thus giving rise to the photoelectrochemical oxidation reaction. The influence of the neutral additive pyridine upon the etching kinetics is described while the nature of the changes in surface structural anisotropy are discussed in terms of possible surface reconstruction in aqueous solution, the appearance of highly oriented macroscopic etch features and the possible formation of oriented surface layers.

Original language	English
Pages (from-to)	1028-1032
Number of pages	5
Journal	Surface Science
Volume	307-309
Issue number	PART B
DOIs	https://doi.org/10.1016/0039-6028(94)91534-2
Publication status	Published - 20 Apr 1994

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title = "Photoelectrochernical etching of n-GaAs(001) electrodes studied using reflectance anisotropy",

abstract = "We demonstrate here that the novel {"}epioptic{"} technique of reflectance anisotropy (RA) is capable of detecting in real time, variations in the optical anisotropy of an GaAs(001) electrode surface during anodic oxidation in aqueous KCl solutions. A novel system is described in which the exciting probe laser beam also excites minority charge carriers (holes) in the n-type materials thus giving rise to the photoelectrochemical oxidation reaction. The influence of the neutral additive pyridine upon the etching kinetics is described while the nature of the changes in surface structural anisotropy are discussed in terms of possible surface reconstruction in aqueous solution, the appearance of highly oriented macroscopic etch features and the possible formation of oriented surface layers.",

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doi = "10.1016/0039-6028(94)91534-2",

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T1 - Photoelectrochernical etching of n-GaAs(001) electrodes studied using reflectance anisotropy

AU - Armstrong, S. R.

AU - Pemble, M. E.

AU - Turner, A. R.

PY - 1994/4/20

Y1 - 1994/4/20

N2 - We demonstrate here that the novel "epioptic" technique of reflectance anisotropy (RA) is capable of detecting in real time, variations in the optical anisotropy of an GaAs(001) electrode surface during anodic oxidation in aqueous KCl solutions. A novel system is described in which the exciting probe laser beam also excites minority charge carriers (holes) in the n-type materials thus giving rise to the photoelectrochemical oxidation reaction. The influence of the neutral additive pyridine upon the etching kinetics is described while the nature of the changes in surface structural anisotropy are discussed in terms of possible surface reconstruction in aqueous solution, the appearance of highly oriented macroscopic etch features and the possible formation of oriented surface layers.

AB - We demonstrate here that the novel "epioptic" technique of reflectance anisotropy (RA) is capable of detecting in real time, variations in the optical anisotropy of an GaAs(001) electrode surface during anodic oxidation in aqueous KCl solutions. A novel system is described in which the exciting probe laser beam also excites minority charge carriers (holes) in the n-type materials thus giving rise to the photoelectrochemical oxidation reaction. The influence of the neutral additive pyridine upon the etching kinetics is described while the nature of the changes in surface structural anisotropy are discussed in terms of possible surface reconstruction in aqueous solution, the appearance of highly oriented macroscopic etch features and the possible formation of oriented surface layers.

UR - https://www.scopus.com/pages/publications/0028406010

U2 - 10.1016/0039-6028(94)91534-2

DO - 10.1016/0039-6028(94)91534-2

M3 - Article

AN - SCOPUS:0028406010

SN - 0039-6028

VL - 307-309

SP - 1028

EP - 1032

JO - Surface Science

JF - Surface Science

IS - PART B

ER -

Photoelectrochernical etching of n-GaAs(001) electrodes studied using reflectance anisotropy

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