Photoluminescence investigation of the carrier confining properties of multiquantum barriers

A. P. Morrison; L. Considine; S. Walsh; N. Cordero; J. D. Lambkin; G. M. O'Connor; E. M. Daly; T. J. Glynn; C. J. Van Der Poel

doi:10.1109/3.605556

Photoluminescence investigation of the carrier confining properties of multiquantum barriers

A. P. Morrison
, L. Considine
, S. Walsh
, N. Cordero
, J. D. Lambkin
, G. M. O'Connor
, E. M. Daly
, T. J. Glynn
, C. J. Van Der Poel

School of Engineering and Architecture

Research output: Contribution to journal › Article › peer-review

Abstract

A comparative luminescence study of two Ga_0.52 In_0.48P-(Al_0.5Ga_0.5)_0.52In _0.48P single-quantum-well (SQW) samples with bulk and multiquantum barrier (MQB) barriers is presented. When excess carriers are only created in the quantum wells (QW's) of the samples by resonant excitation using a dye laser, the luminescence efficiency of both samples as a function of temperature is found to be essentially identical. We find, therefore, no evidence for any enhancement in the confining potential of the MQB sample over the bulk barrier sample. From Arrhenius plots of the integrated luminescence intensity, it is found that carrier loss from the QW is dominated by a nonradiative loss mechanism with an activation energy considerably smaller than that expected from direct thermal loss of electrons and holes into the barriers. We suggest that the improved device characteristics reported for lasers containing MQB's is due to effects other than the quantum interference of electrons.

Original language	English
Pages (from-to)	1338-1343
Number of pages	6
Journal	IEEE Journal of Quantum Electronics
Volume	33
Issue number	8
DOIs	https://doi.org/10.1109/3.605556
Publication status	Published - Aug 1997

Keywords

AlGaInP
Multiquantum barriers
Photoluminescence measurement
Quantum interference
Quantum wells
Quantum-effect semiconductor devices
Semiconductor lasers

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10.1109/3.605556

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@article{044860db03924c73bdb50f409d811656,

title = "Photoluminescence investigation of the carrier confining properties of multiquantum barriers",

abstract = "A comparative luminescence study of two Ga0.52 In0.48P-(Al0.5Ga0.5)0.52In 0.48P single-quantum-well (SQW) samples with bulk and multiquantum barrier (MQB) barriers is presented. When excess carriers are only created in the quantum wells (QW's) of the samples by resonant excitation using a dye laser, the luminescence efficiency of both samples as a function of temperature is found to be essentially identical. We find, therefore, no evidence for any enhancement in the confining potential of the MQB sample over the bulk barrier sample. From Arrhenius plots of the integrated luminescence intensity, it is found that carrier loss from the QW is dominated by a nonradiative loss mechanism with an activation energy considerably smaller than that expected from direct thermal loss of electrons and holes into the barriers. We suggest that the improved device characteristics reported for lasers containing MQB's is due to effects other than the quantum interference of electrons.",

keywords = "AlGaInP, Multiquantum barriers, Photoluminescence measurement, Quantum interference, Quantum wells, Quantum-effect semiconductor devices, Semiconductor lasers",

author = "Morrison, \{A. P.\} and L. Considine and S. Walsh and N. Cordero and Lambkin, \{J. D.\} and O'Connor, \{G. M.\} and Daly, \{E. M.\} and Glynn, \{T. J.\} and \{Van Der Poel\}, \{C. J.\}",

year = "1997",

month = aug,

doi = "10.1109/3.605556",

language = "English",

volume = "33",

pages = "1338--1343",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

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TY - JOUR

T1 - Photoluminescence investigation of the carrier confining properties of multiquantum barriers

AU - Morrison, A. P.

AU - Considine, L.

AU - Walsh, S.

AU - Cordero, N.

AU - Lambkin, J. D.

AU - O'Connor, G. M.

AU - Daly, E. M.

AU - Glynn, T. J.

AU - Van Der Poel, C. J.

PY - 1997/8

Y1 - 1997/8

N2 - A comparative luminescence study of two Ga0.52 In0.48P-(Al0.5Ga0.5)0.52In 0.48P single-quantum-well (SQW) samples with bulk and multiquantum barrier (MQB) barriers is presented. When excess carriers are only created in the quantum wells (QW's) of the samples by resonant excitation using a dye laser, the luminescence efficiency of both samples as a function of temperature is found to be essentially identical. We find, therefore, no evidence for any enhancement in the confining potential of the MQB sample over the bulk barrier sample. From Arrhenius plots of the integrated luminescence intensity, it is found that carrier loss from the QW is dominated by a nonradiative loss mechanism with an activation energy considerably smaller than that expected from direct thermal loss of electrons and holes into the barriers. We suggest that the improved device characteristics reported for lasers containing MQB's is due to effects other than the quantum interference of electrons.

AB - A comparative luminescence study of two Ga0.52 In0.48P-(Al0.5Ga0.5)0.52In 0.48P single-quantum-well (SQW) samples with bulk and multiquantum barrier (MQB) barriers is presented. When excess carriers are only created in the quantum wells (QW's) of the samples by resonant excitation using a dye laser, the luminescence efficiency of both samples as a function of temperature is found to be essentially identical. We find, therefore, no evidence for any enhancement in the confining potential of the MQB sample over the bulk barrier sample. From Arrhenius plots of the integrated luminescence intensity, it is found that carrier loss from the QW is dominated by a nonradiative loss mechanism with an activation energy considerably smaller than that expected from direct thermal loss of electrons and holes into the barriers. We suggest that the improved device characteristics reported for lasers containing MQB's is due to effects other than the quantum interference of electrons.

KW - AlGaInP

KW - Multiquantum barriers

KW - Photoluminescence measurement

KW - Quantum interference

KW - Quantum wells

KW - Quantum-effect semiconductor devices

KW - Semiconductor lasers

UR - https://www.scopus.com/pages/publications/0031207026

U2 - 10.1109/3.605556

DO - 10.1109/3.605556

M3 - Article

AN - SCOPUS:0031207026

SN - 0018-9197

VL - 33

SP - 1338

EP - 1343

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 8

ER -

Photoluminescence investigation of the carrier confining properties of multiquantum barriers

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Keywords

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