Photoluminescence of wide bandgap II-VI superlattices

  • K. P. O'Donnell
  • , P. J. Parbrook
  • , B. Henderson
  • , C. Trager-Cowan
  • , X. Chen
  • , F. Yang
  • , M. P. Halsall
  • , P. J. Wright
  • , B. Cockayne

Research output: Contribution to journalArticlepeer-review

Abstract

Photoluminescence (PL) and PL decay measurements are used to characterize typical samples of wide gap II-VI strained layer superlattices (SLSs). The results show that good quality material is obtained for SLSs of ZnSe/ZnS, CdSe/CdS (hex), ZnSe/CdSe and ZnS/CdS using atmospheric pressure MOCVD. Quantum confinement in SLSs is confirmed by the peak shift, temperature dependence and decay characteristics of the exciton luminescence. The PL intensity at low temperatures ( <20 K) shows a weak bistable dependence at low excitation power density in several samples. Transition from excitonic to free-particle behaviour is clear at elevated temperatures. The decay curves are non-exponential, indicating the influence of inhomogeneities and/or impurities. However, lifetimes are uniformly longer than in comparable epilayers. In principle, our results allow us to construct a general band offset diagram for the Zn(Cd)S(Se) family of superlattices.

Original languageEnglish
Pages (from-to)554-558
Number of pages5
JournalJournal of Crystal Growth
Volume101
Issue number1-4
DOIs
Publication statusPublished - 1 Apr 1990
Externally publishedYes

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