TY - JOUR
T1 - Photoluminescence under magnetic field and hydrostatic pressure for probing the electronic properties of GaAsN
AU - Polimeni, A.
AU - Pettinari, G.
AU - Trotta, R.
AU - Masia, F.
AU - Felici, M.
AU - Capizzi, M.
AU - Lindsay, A.
AU - O'Reilly, E. P.
AU - Niebling, T.
AU - Stolz, W.
AU - Klar, P. J.
AU - Martelli, F.
AU - Rubini, S.
PY - 2008/1
Y1 - 2008/1
N2 - The puzzling electronic properties of GaAsN have been investigated through the compositional dependence of two highly sensitive band structure parameters: the electron effective mass, m e, and the electron gyromagnetic factor, g e. In the N concentration range from 0% to 0.7%, both m e and g e show a highly nonlinear dependence on N composition that can be explained in terms of alternating on- and off-resonance conditions between the red-shifting conduction band edge and specific energy-pinned N cluster states. Furthermore, the electronic properties of the material are studied under hydrostatic pressure, P. This allows tuning in a same sample the interaction between extended and localized states and disclosing a hierarchy between different nitrogen complexes as regards the extent of the perturbation these complexes exert on the electronic properties of the GaAs host crystal.
AB - The puzzling electronic properties of GaAsN have been investigated through the compositional dependence of two highly sensitive band structure parameters: the electron effective mass, m e, and the electron gyromagnetic factor, g e. In the N concentration range from 0% to 0.7%, both m e and g e show a highly nonlinear dependence on N composition that can be explained in terms of alternating on- and off-resonance conditions between the red-shifting conduction band edge and specific energy-pinned N cluster states. Furthermore, the electronic properties of the material are studied under hydrostatic pressure, P. This allows tuning in a same sample the interaction between extended and localized states and disclosing a hierarchy between different nitrogen complexes as regards the extent of the perturbation these complexes exert on the electronic properties of the GaAs host crystal.
UR - https://www.scopus.com/pages/publications/38849088110
U2 - 10.1002/pssa.200777462
DO - 10.1002/pssa.200777462
M3 - Article
AN - SCOPUS:38849088110
SN - 1862-6300
VL - 205
SP - 107
EP - 113
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
IS - 1
ER -