Photoluminescence under magnetic field and hydrostatic pressure in GaAs1-xNx for probing the compositional dependence of carrier effective mass and gyromagnetic ratio

  • F. Masia
  • , G. Pettinari
  • , A. Polimeni
  • , M. Felici
  • , R. Trotta
  • , M. Capizzi
  • , T. Niebling
  • , H. Günther
  • , P. J. Klar
  • , W. Stolz
  • , A. Lindsay
  • , E. P. O'Reilly
  • , M. Piccin
  • , G. Bais
  • , S. Rubini
  • , F. Martelli
  • , A. Franciosi

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

The influence of nitrogen cluster states on the conduction band (CB) structure of GaAs1-xNx is probed by measuring the effective mass and gyromagnetic ratio of electrons for x < 0.7%. An unusual compositional dependence of these two important CB parameters is found. Such behaviors are well reproduced by a modified k·p model taking into account a non-monotonic loss of γ character of the CB minimum due to multiple crossings between the red-shifting conduction band edge and N cluster states. As well, sudden variations in the electron mass can be externally induced by applying a hydrostatic pressure, which brings the upward moving CB edge into interaction with N states, which at ambient pressure are resonant with the GaAs1-xNx CB continuum.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages157-158
Number of pages2
DOIs
Publication statusPublished - 2007
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: 24 Jul 200628 Jul 2006

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference28th International Conference on the Physics of Semiconductors, ICPS 2006
Country/TerritoryAustria
CityVienna
Period24/07/0628/07/06

Keywords

  • Band structure calculations
  • Dilute nitrides
  • Hydrostatic pressure
  • Magneto-photoluminescence

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