Photoreflectance study of AlGaN/GaN heterostructures grown by MOCVD process

Anna Wójcik; Tomasz Piwoński; Tomasz J. Ochalski; Emil Kowalczyk; Maciej Bugajski; Andrzej Grzegorczyk; Łukasz Macht; Soufien Haffouz; Poul K. Larsen

Photoreflectance study of AlGaN/GaN heterostructures grown by MOCVD process

Anna Wójcik
, Tomasz Piwoński
, Tomasz J. Ochalski
, Emil Kowalczyk
, Maciej Bugajski
, Andrzej Grzegorczyk
, Łukasz Macht
, Soufien Haffouz
, Poul K. Larsen

Research output: Contribution to journal › Article › peer-review

Abstract

In this paper we report the results of photoreflectance (PR) spectroscopy of GaN/AlGaN heterostructures used for realisation of high electron mobility transistors (HEMTs). For the proper operation of such structures a triangular quantum well created at the interface between GaN and AlGaN is required. Due to quantum confinement in this area 2DEG is created. The data obtained from PR technique allow to estimate a real shape of 2DEG confinement potential, what is necessary for verification of design and correctness of the growth process.

Original language	English
Pages (from-to)	431-435
Number of pages	5
Journal	Optica Applicata
Volume	32
Issue number	3
Publication status	Published - 2002
Externally published	Yes

Cite this

@article{5770e3606f6c4f0092e5196566767dd0,

title = "Photoreflectance study of AlGaN/GaN heterostructures grown by MOCVD process",

abstract = "In this paper we report the results of photoreflectance (PR) spectroscopy of GaN/AlGaN heterostructures used for realisation of high electron mobility transistors (HEMTs). For the proper operation of such structures a triangular quantum well created at the interface between GaN and AlGaN is required. Due to quantum confinement in this area 2DEG is created. The data obtained from PR technique allow to estimate a real shape of 2DEG confinement potential, what is necessary for verification of design and correctness of the growth process.",

author = "Anna W{\'o}jcik and Tomasz Piwo{\'n}ski and Ochalski, \{Tomasz J.\} and Emil Kowalczyk and Maciej Bugajski and Andrzej Grzegorczyk and {\L}ukasz Macht and Soufien Haffouz and Larsen, \{Poul K.\}",

year = "2002",

language = "English",

volume = "32",

pages = "431--435",

journal = "Optica Applicata",

issn = "0078-5466",

publisher = "Wroclaw University of Science and Technology",

number = "3",

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TY - JOUR

T1 - Photoreflectance study of AlGaN/GaN heterostructures grown by MOCVD process

AU - Wójcik, Anna

AU - Piwoński, Tomasz

AU - Ochalski, Tomasz J.

AU - Kowalczyk, Emil

AU - Bugajski, Maciej

AU - Grzegorczyk, Andrzej

AU - Macht, Łukasz

AU - Haffouz, Soufien

AU - Larsen, Poul K.

PY - 2002

Y1 - 2002

N2 - In this paper we report the results of photoreflectance (PR) spectroscopy of GaN/AlGaN heterostructures used for realisation of high electron mobility transistors (HEMTs). For the proper operation of such structures a triangular quantum well created at the interface between GaN and AlGaN is required. Due to quantum confinement in this area 2DEG is created. The data obtained from PR technique allow to estimate a real shape of 2DEG confinement potential, what is necessary for verification of design and correctness of the growth process.

AB - In this paper we report the results of photoreflectance (PR) spectroscopy of GaN/AlGaN heterostructures used for realisation of high electron mobility transistors (HEMTs). For the proper operation of such structures a triangular quantum well created at the interface between GaN and AlGaN is required. Due to quantum confinement in this area 2DEG is created. The data obtained from PR technique allow to estimate a real shape of 2DEG confinement potential, what is necessary for verification of design and correctness of the growth process.

UR - https://www.scopus.com/pages/publications/0036944238

M3 - Article

AN - SCOPUS:0036944238

SN - 0078-5466

VL - 32

SP - 431

EP - 435

JO - Optica Applicata

JF - Optica Applicata

IS - 3

ER -

Photoreflectance study of AlGaN/GaN heterostructures grown by MOCVD process

Abstract

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