Physical, chemical and electrical characterisation of the diffusion of copper in silicon dioxide and prevention via a CuAl alloy barrier layer system

Ailbe O'Manachain

doi:10.1016/J.MSSP.2017.02.024

Physical, chemical and electrical characterisation of the diffusion of copper in silicon dioxide and prevention via a CuAl alloy barrier layer system

Ailbe O'Manachain

Tyndall MicroNano Systems

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	Materials Science in Semiconductor Processing
DOIs	https://doi.org/10.1016/J.MSSP.2017.02.024
Publication status	Published - 2017

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10.1016/J.MSSP.2017.02.024

Cite this

@article{cf907aff0c07462cbe93f98e1d4cf4f8,

title = "Physical, chemical and electrical characterisation of the diffusion of copper in silicon dioxide and prevention via a CuAl alloy barrier layer system",

author = "Ailbe O'Manachain",

year = "2017",

doi = "10.1016/J.MSSP.2017.02.024",

language = "Undefined/Unknown",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Physical, chemical and electrical characterisation of the diffusion of copper in silicon dioxide and prevention via a CuAl alloy barrier layer system

AU - O'Manachain, Ailbe

PY - 2017

Y1 - 2017

U2 - 10.1016/J.MSSP.2017.02.024

DO - 10.1016/J.MSSP.2017.02.024

M3 - Article

SN - 1369-8001

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

ER -