Physical, chemical and electrical characterisation of the diffusion of copper in silicon dioxide and prevention via a CuAl alloy barrier layer system

Conor Byrne; B Brennan; R Lundy; J Bogan; A Brady; YY Gomeniuk; S Monaghan; PK Hurley; G Hughes

Physical, chemical and electrical characterisation of the diffusion of copper in silicon dioxide and prevention via a CuAl alloy barrier layer system

Conor Byrne
, B Brennan
, R Lundy
, J Bogan
, A Brady
, YY Gomeniuk
, S Monaghan
, PK Hurley
, G Hughes

Tyndall MicroNano Systems

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	Materials Science in Semiconductor Processing
Publication status	Published - 2017

Cite this

@article{b0ea108f36b94176a2f1326c2e4ef976,

title = "Physical, chemical and electrical characterisation of the diffusion of copper in silicon dioxide and prevention via a CuAl alloy barrier layer system",

author = "Conor Byrne and B Brennan and R Lundy and J Bogan and A Brady and YY Gomeniuk and S Monaghan and PK Hurley and G Hughes",

year = "2017",

language = "Undefined/Unknown",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Physical, chemical and electrical characterisation of the diffusion of copper in silicon dioxide and prevention via a CuAl alloy barrier layer system

AU - Byrne, Conor

AU - Brennan, B

AU - Lundy, R

AU - Bogan, J

AU - Brady, A

AU - Gomeniuk, YY

AU - Monaghan, S

AU - Hurley, PK

AU - Hughes, G

PY - 2017

Y1 - 2017

M3 - Article

SN - 1369-8001

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

ER -