Physical-optical properties of LPCVD amorphous silicon rich-nitride and oxynitride

M. Modreanu; N. Tomozeiu; P. Cosmin; M. Gartner

Physical-optical properties of LPCVD amorphous silicon rich-nitride and oxynitride

M. Modreanu
, N. Tomozeiu
, P. Cosmin
, M. Gartner

National Institute for Research and Development in Microtechnologies Romania

Research output: Contribution to conference › Paper › peer-review

Abstract

Low pressure chemical vapour deposition (LPCVD) silicon oxynitride and rich nitride films of various composition (from pure SiO₂ to pure Si₃N₄) were deposited by changing the relative gas flow ratio N₂O to NH₃ and SiH₂Cl₂ to NH₃, respectively. The effects of oxygen on the physical properties of the films were studied using spectroellipsometry and Fourier transform infrared spectroscopy. The deconvolution of the IR spectra was made. The characteristic absorption peak for Si₃N₄ is at 822 cm^-1 (Si-N bonds), and for SiO_xN_y is around 973 cm^-1 (Si-O-Si bond). More oxygen into films decreases the refractive index of the SiO_xN_y films. Also more silicon in silicon rich nitride increase the refractive index. The refractive index dispersion is studied by single-oscillator Wemple Di Domenico model. The optical gap varies monotonically from 5.43 eV for silicon nitride, to 9 eV for HTO LPCVD silicon dioxide and for the studied silicon oxynitride was found to be around 6 eV.

Original language	English
Pages	201-204
Number of pages	4
Publication status	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 International Semiconductor Conference, CAS'98. Part 2 (of 2) - Sinaia, Romania Duration: 6 Oct 1998 → 10 Oct 1998

Conference

Conference	Proceedings of the 1998 International Semiconductor Conference, CAS'98. Part 2 (of 2)
City	Sinaia, Romania
Period	6/10/98 → 10/10/98

Cite this

@conference{755f285ad11b4a4e9f234680af20768d,

title = "Physical-optical properties of LPCVD amorphous silicon rich-nitride and oxynitride",

abstract = "Low pressure chemical vapour deposition (LPCVD) silicon oxynitride and rich nitride films of various composition (from pure SiO2 to pure Si3N4) were deposited by changing the relative gas flow ratio N2O to NH3 and SiH2Cl2 to NH3, respectively. The effects of oxygen on the physical properties of the films were studied using spectroellipsometry and Fourier transform infrared spectroscopy. The deconvolution of the IR spectra was made. The characteristic absorption peak for Si3N4 is at 822 cm-1 (Si-N bonds), and for SiOxNy is around 973 cm-1 (Si-O-Si bond). More oxygen into films decreases the refractive index of the SiOxNy films. Also more silicon in silicon rich nitride increase the refractive index. The refractive index dispersion is studied by single-oscillator Wemple Di Domenico model. The optical gap varies monotonically from 5.43 eV for silicon nitride, to 9 eV for HTO LPCVD silicon dioxide and for the studied silicon oxynitride was found to be around 6 eV.",

author = "M. Modreanu and N. Tomozeiu and P. Cosmin and M. Gartner",

year = "1998",

language = "English",

pages = "201--204",

note = "Proceedings of the 1998 International Semiconductor Conference, CAS'98. Part 2 (of 2) ; Conference date: 06-10-1998 Through 10-10-1998",

}

TY - CONF

T1 - Physical-optical properties of LPCVD amorphous silicon rich-nitride and oxynitride

AU - Modreanu, M.

AU - Tomozeiu, N.

AU - Cosmin, P.

AU - Gartner, M.

PY - 1998

Y1 - 1998

N2 - Low pressure chemical vapour deposition (LPCVD) silicon oxynitride and rich nitride films of various composition (from pure SiO2 to pure Si3N4) were deposited by changing the relative gas flow ratio N2O to NH3 and SiH2Cl2 to NH3, respectively. The effects of oxygen on the physical properties of the films were studied using spectroellipsometry and Fourier transform infrared spectroscopy. The deconvolution of the IR spectra was made. The characteristic absorption peak for Si3N4 is at 822 cm-1 (Si-N bonds), and for SiOxNy is around 973 cm-1 (Si-O-Si bond). More oxygen into films decreases the refractive index of the SiOxNy films. Also more silicon in silicon rich nitride increase the refractive index. The refractive index dispersion is studied by single-oscillator Wemple Di Domenico model. The optical gap varies monotonically from 5.43 eV for silicon nitride, to 9 eV for HTO LPCVD silicon dioxide and for the studied silicon oxynitride was found to be around 6 eV.

AB - Low pressure chemical vapour deposition (LPCVD) silicon oxynitride and rich nitride films of various composition (from pure SiO2 to pure Si3N4) were deposited by changing the relative gas flow ratio N2O to NH3 and SiH2Cl2 to NH3, respectively. The effects of oxygen on the physical properties of the films were studied using spectroellipsometry and Fourier transform infrared spectroscopy. The deconvolution of the IR spectra was made. The characteristic absorption peak for Si3N4 is at 822 cm-1 (Si-N bonds), and for SiOxNy is around 973 cm-1 (Si-O-Si bond). More oxygen into films decreases the refractive index of the SiOxNy films. Also more silicon in silicon rich nitride increase the refractive index. The refractive index dispersion is studied by single-oscillator Wemple Di Domenico model. The optical gap varies monotonically from 5.43 eV for silicon nitride, to 9 eV for HTO LPCVD silicon dioxide and for the studied silicon oxynitride was found to be around 6 eV.

UR - https://www.scopus.com/pages/publications/0032315455

M3 - Paper

AN - SCOPUS:0032315455

SP - 201

EP - 204

T2 - Proceedings of the 1998 International Semiconductor Conference, CAS'98. Part 2 (of 2)

Y2 - 6 October 1998 through 10 October 1998

ER -

Physical-optical properties of LPCVD amorphous silicon rich-nitride and oxynitride

Abstract

Conference

Other files and links

Fingerprint

Cite this