Physical properties of polycrystalline silicon films related to LPCVD conditions

M. Modreanu; M. Bercu; C. Cobianu

doi:10.1016/S0040-6090(00)01798-3

Physical properties of polycrystalline silicon films related to LPCVD conditions

M. Modreanu
, M. Bercu
, C. Cobianu

Research output: Contribution to journal › Article › peer-review

Abstract

The properties of polycrystalline silicon films have been investigated in relation to low pressure chemically vapour deposited (LPCVD) conditions, such as gas chemical content, pressure and temperature in the range of 500-615 °C. A careful investigation of the 250-400-nm reflection spectra indicates a definite dependence on the temperature and growth rate for LPCVD poly-Si films. The disorder in as-deposited samples produces changes to the main peaks of optical transition in c-Si described by the complex band theory. The percentage of the disorder has been associated with changes in Γ′₂₃-Γ₁₅ at 365-nm and in X₄-X₁ at 280-nm optical transitions obtained by a deconvolution approach to UV spectra. The most disordered LPCVD poly-Si samples have been obtained at 550 °C for a deposition pressure of 400 mtorr. Optical properties are discussed in relation to CVD conditions and are related to XRD data.

Original language	English
Pages (from-to)	212-215
Number of pages	4
Journal	Thin Solid Films
Volume	383
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(00)01798-3
Publication status	Published - 15 Feb 2001
Externally published	Yes

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title = "Physical properties of polycrystalline silicon films related to LPCVD conditions",

abstract = "The properties of polycrystalline silicon films have been investigated in relation to low pressure chemically vapour deposited (LPCVD) conditions, such as gas chemical content, pressure and temperature in the range of 500-615 °C. A careful investigation of the 250-400-nm reflection spectra indicates a definite dependence on the temperature and growth rate for LPCVD poly-Si films. The disorder in as-deposited samples produces changes to the main peaks of optical transition in c-Si described by the complex band theory. The percentage of the disorder has been associated with changes in Γ′23-Γ15 at 365-nm and in X4-X1 at 280-nm optical transitions obtained by a deconvolution approach to UV spectra. The most disordered LPCVD poly-Si samples have been obtained at 550 °C for a deposition pressure of 400 mtorr. Optical properties are discussed in relation to CVD conditions and are related to XRD data.",

author = "M. Modreanu and M. Bercu and C. Cobianu",

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doi = "10.1016/S0040-6090(00)01798-3",

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TY - JOUR

T1 - Physical properties of polycrystalline silicon films related to LPCVD conditions

AU - Modreanu, M.

AU - Bercu, M.

AU - Cobianu, C.

PY - 2001/2/15

Y1 - 2001/2/15

N2 - The properties of polycrystalline silicon films have been investigated in relation to low pressure chemically vapour deposited (LPCVD) conditions, such as gas chemical content, pressure and temperature in the range of 500-615 °C. A careful investigation of the 250-400-nm reflection spectra indicates a definite dependence on the temperature and growth rate for LPCVD poly-Si films. The disorder in as-deposited samples produces changes to the main peaks of optical transition in c-Si described by the complex band theory. The percentage of the disorder has been associated with changes in Γ′23-Γ15 at 365-nm and in X4-X1 at 280-nm optical transitions obtained by a deconvolution approach to UV spectra. The most disordered LPCVD poly-Si samples have been obtained at 550 °C for a deposition pressure of 400 mtorr. Optical properties are discussed in relation to CVD conditions and are related to XRD data.

AB - The properties of polycrystalline silicon films have been investigated in relation to low pressure chemically vapour deposited (LPCVD) conditions, such as gas chemical content, pressure and temperature in the range of 500-615 °C. A careful investigation of the 250-400-nm reflection spectra indicates a definite dependence on the temperature and growth rate for LPCVD poly-Si films. The disorder in as-deposited samples produces changes to the main peaks of optical transition in c-Si described by the complex band theory. The percentage of the disorder has been associated with changes in Γ′23-Γ15 at 365-nm and in X4-X1 at 280-nm optical transitions obtained by a deconvolution approach to UV spectra. The most disordered LPCVD poly-Si samples have been obtained at 550 °C for a deposition pressure of 400 mtorr. Optical properties are discussed in relation to CVD conditions and are related to XRD data.

UR - https://www.scopus.com/pages/publications/0035247828

U2 - 10.1016/S0040-6090(00)01798-3

DO - 10.1016/S0040-6090(00)01798-3

M3 - Article

AN - SCOPUS:0035247828

SN - 0040-6090

VL - 383

SP - 212

EP - 215

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Physical properties of polycrystalline silicon films related to LPCVD conditions

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