Picosecond carrier dynamics in AlInGaN multiple quantum wells

S. A. Hashemizadeh; J. P.R. Wells; P. Murzyn; J. Brown; B. D. Jones; T. Wang; P. J. Parbrook; A. M. Fox; D. J. Mowbray; M. S. Skolnick

doi:10.1063/1.2137990

Picosecond carrier dynamics in AlInGaN multiple quantum wells

S. A. Hashemizadeh
, J. P.R. Wells
, P. Murzyn
, J. Brown
, B. D. Jones
, T. Wang
, P. J. Parbrook
, A. M. Fox
, D. J. Mowbray
, M. S. Skolnick

University of Sheffield

Research output: Contribution to journal › Article › peer-review

Abstract

We report on measurements of stimulated emission in AlInGaN multiquantum wells using ultrafast pump-probe spectroscopy. Low power photoluminescence (PL) of Al0.04 In0.015 Ga0.945 N Al0.12 In0.01 Ga0.87 N multiquantum wells (MQW) yields a single MQW PL peak at 347.2 nm at 10 K. Wavelength degenerate pump-probe measurements show a single exponential decay at excitation densities below the stimulated emission threshold having a recombination decay constant of 160 ps at room temperature. At excitation densities greater than 50 μJ cm2 a biexponential decay is observed, with a fast component (3.3 ps at Iexc =690 μJ cm2) attributed to accelerated relaxation due to stimulated emission. The fractional strength of this fast component indicates that up to 85% of the excited carriers relax via stimulated emission.

Original language	English
Article number	232106
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	23
DOIs	https://doi.org/10.1063/1.2137990
Publication status	Published - 2005
Externally published	Yes

Access to Document

10.1063/1.2137990

Cite this

@article{bf6882850cb9461699032d2bda6ff819,

title = "Picosecond carrier dynamics in AlInGaN multiple quantum wells",

abstract = "We report on measurements of stimulated emission in AlInGaN multiquantum wells using ultrafast pump-probe spectroscopy. Low power photoluminescence (PL) of Al0.04 In0.015 Ga0.945 N Al0.12 In0.01 Ga0.87 N multiquantum wells (MQW) yields a single MQW PL peak at 347.2 nm at 10 K. Wavelength degenerate pump-probe measurements show a single exponential decay at excitation densities below the stimulated emission threshold having a recombination decay constant of 160 ps at room temperature. At excitation densities greater than 50 μJ cm2 a biexponential decay is observed, with a fast component (3.3 ps at Iexc =690 μJ cm2) attributed to accelerated relaxation due to stimulated emission. The fractional strength of this fast component indicates that up to 85\% of the excited carriers relax via stimulated emission.",

author = "Hashemizadeh, \{S. A.\} and Wells, \{J. P.R.\} and P. Murzyn and J. Brown and Jones, \{B. D.\} and T. Wang and Parbrook, \{P. J.\} and Fox, \{A. M.\} and Mowbray, \{D. J.\} and Skolnick, \{M. S.\}",

year = "2005",

doi = "10.1063/1.2137990",

language = "English",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "23",

}

TY - JOUR

T1 - Picosecond carrier dynamics in AlInGaN multiple quantum wells

AU - Hashemizadeh, S. A.

AU - Wells, J. P.R.

AU - Murzyn, P.

AU - Brown, J.

AU - Jones, B. D.

AU - Wang, T.

AU - Parbrook, P. J.

AU - Fox, A. M.

AU - Mowbray, D. J.

AU - Skolnick, M. S.

PY - 2005

Y1 - 2005

N2 - We report on measurements of stimulated emission in AlInGaN multiquantum wells using ultrafast pump-probe spectroscopy. Low power photoluminescence (PL) of Al0.04 In0.015 Ga0.945 N Al0.12 In0.01 Ga0.87 N multiquantum wells (MQW) yields a single MQW PL peak at 347.2 nm at 10 K. Wavelength degenerate pump-probe measurements show a single exponential decay at excitation densities below the stimulated emission threshold having a recombination decay constant of 160 ps at room temperature. At excitation densities greater than 50 μJ cm2 a biexponential decay is observed, with a fast component (3.3 ps at Iexc =690 μJ cm2) attributed to accelerated relaxation due to stimulated emission. The fractional strength of this fast component indicates that up to 85% of the excited carriers relax via stimulated emission.

AB - We report on measurements of stimulated emission in AlInGaN multiquantum wells using ultrafast pump-probe spectroscopy. Low power photoluminescence (PL) of Al0.04 In0.015 Ga0.945 N Al0.12 In0.01 Ga0.87 N multiquantum wells (MQW) yields a single MQW PL peak at 347.2 nm at 10 K. Wavelength degenerate pump-probe measurements show a single exponential decay at excitation densities below the stimulated emission threshold having a recombination decay constant of 160 ps at room temperature. At excitation densities greater than 50 μJ cm2 a biexponential decay is observed, with a fast component (3.3 ps at Iexc =690 μJ cm2) attributed to accelerated relaxation due to stimulated emission. The fractional strength of this fast component indicates that up to 85% of the excited carriers relax via stimulated emission.

UR - https://www.scopus.com/pages/publications/28444499004

U2 - 10.1063/1.2137990

DO - 10.1063/1.2137990

M3 - Article

AN - SCOPUS:28444499004

SN - 0003-6951

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 232106

ER -

Picosecond carrier dynamics in AlInGaN multiple quantum wells

Abstract

Access to Document

Other files and links

Fingerprint

Cite this