Plasma process induced degradation of thin inter-polysilicon dielectric layers

P. K. Hurley; R. Rodrigues; P. Kay; R. P.S. Thakur; D. Clarke; E. Sheehan; A. Mathewson

Plasma process induced degradation of thin inter-polysilicon dielectric layers

P. K. Hurley
, R. Rodrigues
, P. Kay
, R. P.S. Thakur
, D. Clarke
, E. Sheehan
, A. Mathewson

University College Cork

Research output: Contribution to conference › Paper › peer-review

Abstract

Plasma processing induced damage to thin (3 to 10nm) silicon dioxide (SiO₂) and oxide/nitride/oxide (ONO) layers formed on polycrystalline silicon (polysilicon) by rapid thermal processing (RTP) was observed. A number of observations were made relating to plasma damage to the thin inter-polysilicon dielectric layer. It was observed that the dielectric type (ONO or SiO₂) and the method used to contact the polysilicon 2 layer of the capacitor, had a pronounced effect on the susceptibility of the thin dielectric layer to subsequent plasma processing damage.

Original language	English
Pages	45-48
Number of pages	4
Publication status	Published - 1999
Event	Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID) - Monterey, CA, USA Duration: 9 May 1999 → 11 May 1999

Conference

Conference	Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID)
City	Monterey, CA, USA
Period	9/05/99 → 11/05/99

Cite this

@conference{6c4cce8bffc24ef8919acfcc642044b6,

title = "Plasma process induced degradation of thin inter-polysilicon dielectric layers",

abstract = "Plasma processing induced damage to thin (3 to 10nm) silicon dioxide (SiO2) and oxide/nitride/oxide (ONO) layers formed on polycrystalline silicon (polysilicon) by rapid thermal processing (RTP) was observed. A number of observations were made relating to plasma damage to the thin inter-polysilicon dielectric layer. It was observed that the dielectric type (ONO or SiO2) and the method used to contact the polysilicon 2 layer of the capacitor, had a pronounced effect on the susceptibility of the thin dielectric layer to subsequent plasma processing damage.",

author = "Hurley, \{P. K.\} and R. Rodrigues and P. Kay and Thakur, \{R. P.S.\} and D. Clarke and E. Sheehan and A. Mathewson",

year = "1999",

language = "English",

pages = "45--48",

note = "Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID) ; Conference date: 09-05-1999 Through 11-05-1999",

}

TY - CONF

T1 - Plasma process induced degradation of thin inter-polysilicon dielectric layers

AU - Hurley, P. K.

AU - Rodrigues, R.

AU - Kay, P.

AU - Thakur, R. P.S.

AU - Clarke, D.

AU - Sheehan, E.

AU - Mathewson, A.

PY - 1999

Y1 - 1999

N2 - Plasma processing induced damage to thin (3 to 10nm) silicon dioxide (SiO2) and oxide/nitride/oxide (ONO) layers formed on polycrystalline silicon (polysilicon) by rapid thermal processing (RTP) was observed. A number of observations were made relating to plasma damage to the thin inter-polysilicon dielectric layer. It was observed that the dielectric type (ONO or SiO2) and the method used to contact the polysilicon 2 layer of the capacitor, had a pronounced effect on the susceptibility of the thin dielectric layer to subsequent plasma processing damage.

AB - Plasma processing induced damage to thin (3 to 10nm) silicon dioxide (SiO2) and oxide/nitride/oxide (ONO) layers formed on polycrystalline silicon (polysilicon) by rapid thermal processing (RTP) was observed. A number of observations were made relating to plasma damage to the thin inter-polysilicon dielectric layer. It was observed that the dielectric type (ONO or SiO2) and the method used to contact the polysilicon 2 layer of the capacitor, had a pronounced effect on the susceptibility of the thin dielectric layer to subsequent plasma processing damage.

UR - https://www.scopus.com/pages/publications/0033354433

M3 - Paper

AN - SCOPUS:0033354433

SP - 45

EP - 48

T2 - Proceedings of the 1999 4th International Symposium on Plasma Process-Induced Damage (P2ID)

Y2 - 9 May 1999 through 11 May 1999

ER -

Plasma process induced degradation of thin inter-polysilicon dielectric layers

Abstract

Conference

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