Polarization fields in semipolar (20 2 ̄ 1 ̄) and (20 2 ̄ 1) InGaN light emitting diodes

Stefan Freytag; Michael Winkler; Rüdiger Goldhahn; Tim Wernicke; Monir Rychetsky; Ingrid L. Koslow; Michael Kneissl; Duc V. Dinh; Brian Corbett; Peter J. Parbrook; Martin Feneberg

doi:10.1063/1.5134952

Polarization fields in semipolar (20 2 ̄ 1 ̄) and (20 2 ̄ 1) InGaN light emitting diodes

Stefan Freytag
, Michael Winkler
, Rüdiger Goldhahn
, Tim Wernicke
, Monir Rychetsky
, Ingrid L. Koslow
, Michael Kneissl
, Duc V. Dinh
, Brian Corbett
, Peter J. Parbrook
, Martin Feneberg

Research output: Contribution to journal › Article › peer-review

Abstract

In_xGa_1-xN/GaN multiple quantum well structures (x = 0.13 and 0.18) embedded into p-i-n diodes on (20 2 ̄ 1 ̄) and (20 2 ̄ 1) oriented GaN substrates were investigated by electroreflectance, photocurrent, and electroluminescence. Transition energies in absorption and emission experiments were measured as a function of the polarization orientation of light and applied bias voltage. The results were analyzed by a perturbation theoretical model to determine polarization fields. For the (20 2 ̄ 1 ̄) sample (x = 0.18), the flatband voltage is found at + 1 V corresponding to a polarization field of - 458 kV / cm. For the (20 2 ̄ 1) sample (x = 0.13), the polarization field is estimated to be ≈ + 330 kV / cm at flatband voltage higher than turn-on voltage of this light emitting diode.

Original language	English
Article number	062106
Journal	Applied Physics Letters
Volume	116
Issue number	6
DOIs	https://doi.org/10.1063/1.5134952
Publication status	Published - 10 Feb 2020

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@article{f710c8d4f06b43c2be7590461890c27f,

title = "Polarization fields in semipolar (20 2{\= } 1{\= }) and (20 2{\= } 1) InGaN light emitting diodes",

abstract = "InxGa1-xN/GaN multiple quantum well structures (x = 0.13 and 0.18) embedded into p-i-n diodes on (20 2{\= } 1{\= }) and (20 2{\= } 1) oriented GaN substrates were investigated by electroreflectance, photocurrent, and electroluminescence. Transition energies in absorption and emission experiments were measured as a function of the polarization orientation of light and applied bias voltage. The results were analyzed by a perturbation theoretical model to determine polarization fields. For the (20 2{\= } 1{\= }) sample (x = 0.18), the flatband voltage is found at + 1 V corresponding to a polarization field of - 458 kV / cm. For the (20 2{\= } 1) sample (x = 0.13), the polarization field is estimated to be ≈ + 330 kV / cm at flatband voltage higher than turn-on voltage of this light emitting diode.",

author = "Stefan Freytag and Michael Winkler and R{\"u}diger Goldhahn and Tim Wernicke and Monir Rychetsky and Koslow, \{Ingrid L.\} and Michael Kneissl and Dinh, \{Duc V.\} and Brian Corbett and Parbrook, \{Peter J.\} and Martin Feneberg",

note = "Publisher Copyright: {\textcopyright} 2020 Author(s).",

year = "2020",

month = feb,

day = "10",

doi = "10.1063/1.5134952",

language = "English",

volume = "116",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Polarization fields in semipolar (20 2 ̄ 1 ̄) and (20 2 ̄ 1) InGaN light emitting diodes

AU - Freytag, Stefan

AU - Winkler, Michael

AU - Goldhahn, Rüdiger

AU - Wernicke, Tim

AU - Rychetsky, Monir

AU - Koslow, Ingrid L.

AU - Kneissl, Michael

AU - Dinh, Duc V.

AU - Corbett, Brian

AU - Parbrook, Peter J.

AU - Feneberg, Martin

PY - 2020/2/10

Y1 - 2020/2/10

N2 - InxGa1-xN/GaN multiple quantum well structures (x = 0.13 and 0.18) embedded into p-i-n diodes on (20 2 ̄ 1 ̄) and (20 2 ̄ 1) oriented GaN substrates were investigated by electroreflectance, photocurrent, and electroluminescence. Transition energies in absorption and emission experiments were measured as a function of the polarization orientation of light and applied bias voltage. The results were analyzed by a perturbation theoretical model to determine polarization fields. For the (20 2 ̄ 1 ̄) sample (x = 0.18), the flatband voltage is found at + 1 V corresponding to a polarization field of - 458 kV / cm. For the (20 2 ̄ 1) sample (x = 0.13), the polarization field is estimated to be ≈ + 330 kV / cm at flatband voltage higher than turn-on voltage of this light emitting diode.

AB - InxGa1-xN/GaN multiple quantum well structures (x = 0.13 and 0.18) embedded into p-i-n diodes on (20 2 ̄ 1 ̄) and (20 2 ̄ 1) oriented GaN substrates were investigated by electroreflectance, photocurrent, and electroluminescence. Transition energies in absorption and emission experiments were measured as a function of the polarization orientation of light and applied bias voltage. The results were analyzed by a perturbation theoretical model to determine polarization fields. For the (20 2 ̄ 1 ̄) sample (x = 0.18), the flatband voltage is found at + 1 V corresponding to a polarization field of - 458 kV / cm. For the (20 2 ̄ 1) sample (x = 0.13), the polarization field is estimated to be ≈ + 330 kV / cm at flatband voltage higher than turn-on voltage of this light emitting diode.

UR - https://www.scopus.com/pages/publications/85079507696

U2 - 10.1063/1.5134952

DO - 10.1063/1.5134952

M3 - Article

AN - SCOPUS:85079507696

SN - 0003-6951

VL - 116

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 062106

ER -

Polarization fields in semipolar (20 2 ̄ 1 ̄) and (20 2 ̄ 1) InGaN light emitting diodes

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