Polarization matching design of InGaN-based semi-polar quantum wells - A case study of (11 2 ̄ 2) orientation

Grzegorz Kozlowski; Stefan Schulz; Brian Corbett

doi:10.1063/1.4864478

Polarization matching design of InGaN-based semi-polar quantum wells - A case study of (11 2 ̄ 2) orientation

Grzegorz Kozlowski
, Stefan Schulz
, Brian Corbett

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

We present a theoretical study of the polarization engineering in semi-polar III-nitrides heterostructures. As a case study, we investigate the influence of GaN, AlGaN, and AlInN barrier material on the performance of semi-polar (112̄2) InGaN-based quantum wells (QWs) for blue (450nm) and yellow (560nm) emission. We show that the magnitude of the total built-in electric field across the QW can be controlled by the barrier material. Our results indicate that AlInN is a promising candidate to achieve (i) reduced wavelength shifts with increasing currents and (ii) strongly increased electron-hole wave function overlap, important for reduced optical recombination times.

Original language	English
Article number	051128
Journal	Applied Physics Letters
Volume	104
Issue number	5
DOIs	https://doi.org/10.1063/1.4864478
Publication status	Published - 3 Feb 2014

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title = "Polarization matching design of InGaN-based semi-polar quantum wells - A case study of (11 2{\= } 2) orientation",

abstract = "We present a theoretical study of the polarization engineering in semi-polar III-nitrides heterostructures. As a case study, we investigate the influence of GaN, AlGaN, and AlInN barrier material on the performance of semi-polar (11{\=2}2) InGaN-based quantum wells (QWs) for blue (450nm) and yellow (560nm) emission. We show that the magnitude of the total built-in electric field across the QW can be controlled by the barrier material. Our results indicate that AlInN is a promising candidate to achieve (i) reduced wavelength shifts with increasing currents and (ii) strongly increased electron-hole wave function overlap, important for reduced optical recombination times.",

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AU - Schulz, Stefan

AU - Corbett, Brian

PY - 2014/2/3

Y1 - 2014/2/3

N2 - We present a theoretical study of the polarization engineering in semi-polar III-nitrides heterostructures. As a case study, we investigate the influence of GaN, AlGaN, and AlInN barrier material on the performance of semi-polar (112̄2) InGaN-based quantum wells (QWs) for blue (450nm) and yellow (560nm) emission. We show that the magnitude of the total built-in electric field across the QW can be controlled by the barrier material. Our results indicate that AlInN is a promising candidate to achieve (i) reduced wavelength shifts with increasing currents and (ii) strongly increased electron-hole wave function overlap, important for reduced optical recombination times.

AB - We present a theoretical study of the polarization engineering in semi-polar III-nitrides heterostructures. As a case study, we investigate the influence of GaN, AlGaN, and AlInN barrier material on the performance of semi-polar (112̄2) InGaN-based quantum wells (QWs) for blue (450nm) and yellow (560nm) emission. We show that the magnitude of the total built-in electric field across the QW can be controlled by the barrier material. Our results indicate that AlInN is a promising candidate to achieve (i) reduced wavelength shifts with increasing currents and (ii) strongly increased electron-hole wave function overlap, important for reduced optical recombination times.

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JF - Applied Physics Letters

IS - 5

M1 - 051128

ER -

Polarization matching design of InGaN-based semi-polar quantum wells - A case study of (11 2 ̄ 2) orientation

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