Abstract
The growth of thin porous anodic aluminum oxide (AAO) films on silicon by anodizing Al on Ti/Au/Si and Ti/Pt/Si substrates in oxalic acid was demonstrated. Removal of the Al 2O 3 barrier layer was effected by selective chemical etching in H 3PO 4 and a reversed bias method in the anodizing solution. Ion transport and the influence of the Ti adhesion layer at the oxide-metal interface during the critical stages of anodization and pore opening were investigated. The AAO films may be exploited as templates in the creation of silicon-integrated nanostructured wire arrays. Electrodeposition of Pt into the AAO template yielded a nanowire array with superior methanol oxidation activity that can be integrated in a micro direct methanol fuel cell.
| Original language | English |
|---|---|
| Pages (from-to) | 110-113 |
| Number of pages | 4 |
| Journal | Solid State Ionics |
| Volume | 216 |
| DOIs | |
| Publication status | Published - 28 May 2012 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- AAO template
- Barrier layer
- DMFC
- Pt nanowire array
- Si integration
- Ti adhesion layer
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