Porous GaN and high-κ MgO-GaN MOS diode layers grown in a single step on silicon

Porous GaN polycrystalline layers with n-type conduction characteristics were catalytically grown from Mg films formed by decomposition of a Mg ₂N₃ precursor typically employed for activating p-type conduction in GaN. After being exposed to oxygen, the Mg film oxidized to a polycrystalline high-κ oxide between the ohmic alloy interlayer contact and the porous GaN, while maintaining a clean interface. Electrical measurements on devices coupled to composition analysis and electron microscopy of the component layers confirm that a MOS-type porous GaN diode on silicon can be formed by chemical vapor deposition in a single growth regime.