Porous to nonporous transition in the morphology of metal assisted etched silicon nanowires

Olan Lotty; Nikolay Petkov; Yordan M. Georgiev; Justin D. Holmes

doi:10.1143/JJAP.51.11PE03

Porous to nonporous transition in the morphology of metal assisted etched silicon nanowires

Olan Lotty
, Nikolay Petkov
, Yordan M. Georgiev
, Justin D. Holmes

School of Chemistry

Research output: Contribution to journal › Article › peer-review

Abstract

A single step metal assisted etching (MAE) process, utilizing metal ion-containing HF solutions in the absence of an external oxidant, has been developed to generate heterostructured Si nanowires with controllable porous (isotropically etched) and non-porous (anisotropically etched) segments. Detailed characterisation of both the porous and non-porous sections of the Si nanowires was provided by transmission electron microscopy studies, enabling the mechanism of nanowire roughening to be ascertained. The versatility of the MAE method for producing heterostructured Si nanowires with varied and controllable textures is discussed in detail.

Original language	English
Article number	11PE03
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	51
Issue number	11 PART2
DOIs	https://doi.org/10.1143/JJAP.51.11PE03
Publication status	Published - Nov 2012

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https://hdl.handle.net/10468/6705Licence: CC BY-NC-ND

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title = "Porous to nonporous transition in the morphology of metal assisted etched silicon nanowires",

abstract = "A single step metal assisted etching (MAE) process, utilizing metal ion-containing HF solutions in the absence of an external oxidant, has been developed to generate heterostructured Si nanowires with controllable porous (isotropically etched) and non-porous (anisotropically etched) segments. Detailed characterisation of both the porous and non-porous sections of the Si nanowires was provided by transmission electron microscopy studies, enabling the mechanism of nanowire roughening to be ascertained. The versatility of the MAE method for producing heterostructured Si nanowires with varied and controllable textures is discussed in detail.",

author = "Olan Lotty and Nikolay Petkov and Georgiev, \{Yordan M.\} and Holmes, \{Justin D.\}",

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AU - Lotty, Olan

AU - Petkov, Nikolay

AU - Georgiev, Yordan M.

AU - Holmes, Justin D.

PY - 2012/11

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N2 - A single step metal assisted etching (MAE) process, utilizing metal ion-containing HF solutions in the absence of an external oxidant, has been developed to generate heterostructured Si nanowires with controllable porous (isotropically etched) and non-porous (anisotropically etched) segments. Detailed characterisation of both the porous and non-porous sections of the Si nanowires was provided by transmission electron microscopy studies, enabling the mechanism of nanowire roughening to be ascertained. The versatility of the MAE method for producing heterostructured Si nanowires with varied and controllable textures is discussed in detail.

AB - A single step metal assisted etching (MAE) process, utilizing metal ion-containing HF solutions in the absence of an external oxidant, has been developed to generate heterostructured Si nanowires with controllable porous (isotropically etched) and non-porous (anisotropically etched) segments. Detailed characterisation of both the porous and non-porous sections of the Si nanowires was provided by transmission electron microscopy studies, enabling the mechanism of nanowire roughening to be ascertained. The versatility of the MAE method for producing heterostructured Si nanowires with varied and controllable textures is discussed in detail.

UR - https://www.scopus.com/pages/publications/84871367844

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DO - 10.1143/JJAP.51.11PE03

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JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 11 PART2

M1 - 11PE03

ER -

Porous to nonporous transition in the morphology of metal assisted etched silicon nanowires

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