Post-breakdown conduction in metal gate/MgO/InP structures

Enrique Miranda; E O'connor; Gregory Hughes; P Casey; Karim Cherkaoui; Scott Monaghan; R Long; Dan O'Connell; Paul K Hurley

Post-breakdown conduction in metal gate/MgO/InP structures

Enrique Miranda
, E O'connor
, Gregory Hughes
, P Casey
, Karim Cherkaoui
, Scott Monaghan
, R Long
, Dan O'Connell
, Paul K Hurley

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Original language	Undefined/Unknown
Title of host publication	2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits
Publication status	Published - 2009

Cite this

@inproceedings{d0abbe8c60044b2e9cf81b7f2d7c4102,

title = "Post-breakdown conduction in metal gate/MgO/InP structures",

author = "Enrique Miranda and E O'connor and Gregory Hughes and P Casey and Karim Cherkaoui and Scott Monaghan and R Long and Dan O'Connell and Hurley, \{Paul K\}",

year = "2009",

language = "Undefined/Unknown",

booktitle = "2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits",

}

TY - GEN

T1 - Post-breakdown conduction in metal gate/MgO/InP structures

AU - Miranda, Enrique

AU - O'connor, E

AU - Hughes, Gregory

AU - Casey, P

AU - Cherkaoui, Karim

AU - Monaghan, Scott

AU - Long, R

AU - O'Connell, Dan

AU - Hurley, Paul K

PY - 2009

Y1 - 2009

M3 - Conference proceeding

BT - 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits

ER -