Post-breakdown conduction in metal gate/MgO/InP structures

E. Miranda; E. O'connor; G. Hughes; P. Casey; K. Cherkaoui; S. Monaghan; R. Long; D. O'connelf; P. K. Hurley

doi:10.1109/IPFA.2009.5232695

Post-breakdown conduction in metal gate/MgO/InP structures

E. Miranda
, E. O'connor
, G. Hughes
, P. Casey
, K. Cherkaoui
, S. Monaghan
, R. Long
, D. O'connelf
, P. K. Hurley

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

The electrical behavior of broken down thin films of magnesium oxide (MgO) grown on indium phosphide (InP) substrates was investigated. To our knowledge, this is the first report that identifies the Soft Break Down (SBD) conduction mode in a metal gate/high-κ/III-V semiconductor structure. It is shown that the leakage current associated with this failure mode follows the power-law model I=aVb for both injection polarities in a voltage range that largely exceeds the one reported for Si02. We also show that the Hard Break Down (HBD) current is remarkably high, involving significant thermal effects that are believed to be at the origin of the switching behavior exhibited by the I-V characteristics.

Original language	English
Title of host publication	Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009
Pages	71-74
Number of pages	4
DOIs	https://doi.org/10.1109/IPFA.2009.5232695
Publication status	Published - 2009
Event	2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 - Suzhou, China Duration: 6 Jul 2009 → 10 Jul 2009

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009
Country/Territory	China
City	Suzhou
Period	6/07/09 → 10/07/09

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10.1109/IPFA.2009.5232695

Cite this

Miranda, E., O'connor, E., Hughes, G., Casey, P., Cherkaoui, K., Monaghan, S., Long, R., O'connelf, D., & Hurley, P. K. (2009). Post-breakdown conduction in metal gate/MgO/InP structures. In Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 (pp. 71-74). Article 5232695 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2009.5232695

@inproceedings{5dd2e4ef13d54a93a9e1a51e2a170816,

title = "Post-breakdown conduction in metal gate/MgO/InP structures",

abstract = "The electrical behavior of broken down thin films of magnesium oxide (MgO) grown on indium phosphide (InP) substrates was investigated. To our knowledge, this is the first report that identifies the Soft Break Down (SBD) conduction mode in a metal gate/high-κ/III-V semiconductor structure. It is shown that the leakage current associated with this failure mode follows the power-law model I=aVb for both injection polarities in a voltage range that largely exceeds the one reported for Si02. We also show that the Hard Break Down (HBD) current is remarkably high, involving significant thermal effects that are believed to be at the origin of the switching behavior exhibited by the I-V characteristics.",

author = "E. Miranda and E. O'connor and G. Hughes and P. Casey and K. Cherkaoui and S. Monaghan and R. Long and D. O'connelf and Hurley, \{P. K.\}",

year = "2009",

doi = "10.1109/IPFA.2009.5232695",

language = "English",

isbn = "9781424439102",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

pages = "71--74",

booktitle = "Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009",

note = "2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 ; Conference date: 06-07-2009 Through 10-07-2009",

}

Miranda, E, O'connor, E, Hughes, G, Casey, P, Cherkaoui, K, Monaghan, S, Long, R, O'connelf, D & Hurley, PK 2009, Post-breakdown conduction in metal gate/MgO/InP structures. in Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009., 5232695, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, pp. 71-74, 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009, Suzhou, China, 6/07/09. https://doi.org/10.1109/IPFA.2009.5232695

Post-breakdown conduction in metal gate/MgO/InP structures. / Miranda, E.; O'connor, E.; Hughes, G. et al.
Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009. 2009. p. 71-74 5232695 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

TY - GEN

T1 - Post-breakdown conduction in metal gate/MgO/InP structures

AU - Miranda, E.

AU - O'connor, E.

AU - Hughes, G.

AU - Casey, P.

AU - Cherkaoui, K.

AU - Monaghan, S.

AU - Long, R.

AU - O'connelf, D.

AU - Hurley, P. K.

PY - 2009

Y1 - 2009

N2 - The electrical behavior of broken down thin films of magnesium oxide (MgO) grown on indium phosphide (InP) substrates was investigated. To our knowledge, this is the first report that identifies the Soft Break Down (SBD) conduction mode in a metal gate/high-κ/III-V semiconductor structure. It is shown that the leakage current associated with this failure mode follows the power-law model I=aVb for both injection polarities in a voltage range that largely exceeds the one reported for Si02. We also show that the Hard Break Down (HBD) current is remarkably high, involving significant thermal effects that are believed to be at the origin of the switching behavior exhibited by the I-V characteristics.

AB - The electrical behavior of broken down thin films of magnesium oxide (MgO) grown on indium phosphide (InP) substrates was investigated. To our knowledge, this is the first report that identifies the Soft Break Down (SBD) conduction mode in a metal gate/high-κ/III-V semiconductor structure. It is shown that the leakage current associated with this failure mode follows the power-law model I=aVb for both injection polarities in a voltage range that largely exceeds the one reported for Si02. We also show that the Hard Break Down (HBD) current is remarkably high, involving significant thermal effects that are believed to be at the origin of the switching behavior exhibited by the I-V characteristics.

UR - https://www.scopus.com/pages/publications/71049185211

U2 - 10.1109/IPFA.2009.5232695

DO - 10.1109/IPFA.2009.5232695

M3 - Conference proceeding

AN - SCOPUS:71049185211

SN - 9781424439102

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

SP - 71

EP - 74

BT - Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009

T2 - 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009

Y2 - 6 July 2009 through 10 July 2009

ER -

Miranda E, O'connor E, Hughes G, Casey P, Cherkaoui K, Monaghan S et al. Post-breakdown conduction in metal gate/MgO/InP structures. In Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009. 2009. p. 71-74. 5232695. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2009.5232695

Post-breakdown conduction in metal gate/MgO/InP structures

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