TY - JOUR
T1 - Post-deposition-annealed lanthanum-doped cerium oxide thin films
T2 - structural and electrical properties
AU - Barhate, Viral Nivritti
AU - Agrawal, Khushabu Santosh
AU - Patil, Vilas Sidhhanath
AU - Mahajan, Ashok Mahadu
N1 - Publisher Copyright:
© 2020, The Nonferrous Metals Society of China and Springer-Verlag GmbH Germany, part of Springer Nature.
PY - 2021/7
Y1 - 2021/7
N2 - The metal-organic-decomposed lanthanum cerium oxide (LaCeO2) solution was spin-coated on p-type Si substrate to form thin films. The method of microwave-assisted annealing was adopted to modify the surface properties of the deposited thin films. The post-deposition annealing (PDA) at different microwave powers and thermal annealing temperature of 400 °C was performed on LaCeO2 thin films spin-coated on Si. Influence of this PDA on structural and electrical properties of deposited LaCeO2 thin films was studied and compared. X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR) results reveal the great improvement in the structural properties in terms of removal of residual impurities from LaCeO2 films, reduced roughness and improvement in crystalline properties as compared to those of hot-plate-annealed samples. The electrical properties of Al/LaCeO2/Si stack were also studied. The different electrical parameters such as k value, interface trap density (Dit) and effective oxide charges (Qeff) were extracted and found to be improved with the increase in microwave annealing power.
AB - The metal-organic-decomposed lanthanum cerium oxide (LaCeO2) solution was spin-coated on p-type Si substrate to form thin films. The method of microwave-assisted annealing was adopted to modify the surface properties of the deposited thin films. The post-deposition annealing (PDA) at different microwave powers and thermal annealing temperature of 400 °C was performed on LaCeO2 thin films spin-coated on Si. Influence of this PDA on structural and electrical properties of deposited LaCeO2 thin films was studied and compared. X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR) results reveal the great improvement in the structural properties in terms of removal of residual impurities from LaCeO2 films, reduced roughness and improvement in crystalline properties as compared to those of hot-plate-annealed samples. The electrical properties of Al/LaCeO2/Si stack were also studied. The different electrical parameters such as k value, interface trap density (Dit) and effective oxide charges (Qeff) were extracted and found to be improved with the increase in microwave annealing power.
KW - High-k
KW - LaCeO
KW - Microwave-assisted annealing
UR - https://www.scopus.com/pages/publications/85082969861
U2 - 10.1007/s12598-020-01380-x
DO - 10.1007/s12598-020-01380-x
M3 - Article
AN - SCOPUS:85082969861
SN - 1001-0521
VL - 40
SP - 1835
EP - 1843
JO - Rare Metals
JF - Rare Metals
IS - 7
ER -