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Post deposition UV-induced O
2
annealing of HfO
2
thin films
Q. Fang
, I. Liaw
,
M. Modreanu
, P. K. Hurley
, I. W. Boyd
Tyndall
Tyndall MicroNano Systems
Tyndall Photonics
School of Chemistry
University College London
Research output
:
Contribution to journal
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Article
›
peer-review
Overview
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2
annealing of HfO
2
thin films'. Together they form a unique fingerprint.
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Material Science
Thin Films
100%
Annealing
100%
Film
83%
Chemical Vapor Deposition
66%
Permittivity
33%
Thermal Chemical Vapor Deposition
33%
Oxide Compound
16%
Silicon
16%
Refractive Index
16%
Density
16%
X-Ray Diffraction
16%
Oxide Film
16%
Optical Property
16%
Lamp
16%
Engineering
Thin Films
100%
Chemical Vapor Deposition
100%
Deposition Rate
33%
Annealing Time
33%
Refractive Index
16%
Refractivity
16%
Low-Temperature
16%
Silicon Dioxide
16%
Silicon Substrate
16%
Annealing Process
16%
Oxide Film
16%
Sio2 Layer
16%
Deposited Film
16%
Annealing Temperature
16%
Theoretical Value
16%
Interfacial Layer
16%
Breakdown Field
16%
Excimer Lamp
16%
X Ray Diffraction
16%