@inbook{51627de21c544c5098d0b93a13244322,
title = "Practical considerations for measurements of test structures for dielectric characterization",
abstract = "This paper presents a method for measuring the complex permittivity of dielectric material on a dielectric/metal stack. A series of circular capacitor and transmission line test structures are designed and fabricated. The methodology has been verified by measuring the dielectric constant of a known SiO2 layer using Capacitance-Voltage (C-V) measurement and scattering parameter (S-parameter) measurements. The combination of C-V measurement and Sparameter measurement is shown to be suitable for characterization of dielectric material on the complex cross-sections.",
author = "Wenbin Chen and McCarthy, \{Kevin G.\} and Alan Mathewson",
year = "2009",
doi = "10.1109/ICMTS.2009.4814646",
language = "English",
isbn = "9781424442591",
series = "IEEE International Conference on Microelectronic Test Structures",
pages = "221--225",
booktitle = "ICMTS 2009 - 2009 IEEE International Conference on Microelectronic Test Structures",
note = "2009 IEEE International Conference on Microelectronic Test Structures, ICMTS 2009 ; Conference date: 30-03-2009 Through 02-04-2009",
}