Preparation and optical characterization of APCVD BPSG thin films used for micromachining applications

M. Modreanu; P. Cosmin; Mariuca Gartner; Carmen Danila

Preparation and optical characterization of APCVD BPSG thin films used for micromachining applications

M. Modreanu
, P. Cosmin
, Mariuca Gartner
, Carmen Danila

National Institute for Research and Development in Microtechnologies Romania

Research output: Contribution to conference › Paper › peer-review

Abstract

Atmospheric Pressure Chemical Vapour Deposition (APCVD) films of borophosphosilicate glass with different content of phosphorus and boron was studied as masks for etching in KOH solution. Via the dopant content (B and P) in as-deposited glasses we can control the etch rate and the stress in the layers. The effect of the proposed densification treatment on the BPSG films is investigated using spectroellipsometry and Wemple Di Domenico approximation. The experiments lead to the conclusion that the best solution is a densified thick multiple layers-SiO₂-BPSG (4wt. % P, 11wt.%B)-SiO₂. The densification treatment used is compatible with the aluminum metalization process.

Original language	English
Pages	523-526
Number of pages	4
Publication status	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 International Semiconductor Conference (CAS '99) - Sinaia, Romania Duration: 5 Oct 1999 → 9 Oct 1999

Conference

Conference	Proceedings of the 1999 International Semiconductor Conference (CAS '99)
City	Sinaia, Romania
Period	5/10/99 → 9/10/99

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Cite this

@conference{778c34f4cfcb42198ef0bb392472c99c,

title = "Preparation and optical characterization of APCVD BPSG thin films used for micromachining applications",

abstract = "Atmospheric Pressure Chemical Vapour Deposition (APCVD) films of borophosphosilicate glass with different content of phosphorus and boron was studied as masks for etching in KOH solution. Via the dopant content (B and P) in as-deposited glasses we can control the etch rate and the stress in the layers. The effect of the proposed densification treatment on the BPSG films is investigated using spectroellipsometry and Wemple Di Domenico approximation. The experiments lead to the conclusion that the best solution is a densified thick multiple layers-SiO2-BPSG (4wt. \% P, 11wt.\%B)-SiO2. The densification treatment used is compatible with the aluminum metalization process.",

author = "M. Modreanu and P. Cosmin and Mariuca Gartner and Carmen Danila",

year = "1999",

language = "English",

pages = "523--526",

note = "Proceedings of the 1999 International Semiconductor Conference (CAS '99) ; Conference date: 05-10-1999 Through 09-10-1999",

}

TY - CONF

T1 - Preparation and optical characterization of APCVD BPSG thin films used for micromachining applications

AU - Modreanu, M.

AU - Cosmin, P.

AU - Gartner, Mariuca

AU - Danila, Carmen

PY - 1999

Y1 - 1999

N2 - Atmospheric Pressure Chemical Vapour Deposition (APCVD) films of borophosphosilicate glass with different content of phosphorus and boron was studied as masks for etching in KOH solution. Via the dopant content (B and P) in as-deposited glasses we can control the etch rate and the stress in the layers. The effect of the proposed densification treatment on the BPSG films is investigated using spectroellipsometry and Wemple Di Domenico approximation. The experiments lead to the conclusion that the best solution is a densified thick multiple layers-SiO2-BPSG (4wt. % P, 11wt.%B)-SiO2. The densification treatment used is compatible with the aluminum metalization process.

AB - Atmospheric Pressure Chemical Vapour Deposition (APCVD) films of borophosphosilicate glass with different content of phosphorus and boron was studied as masks for etching in KOH solution. Via the dopant content (B and P) in as-deposited glasses we can control the etch rate and the stress in the layers. The effect of the proposed densification treatment on the BPSG films is investigated using spectroellipsometry and Wemple Di Domenico approximation. The experiments lead to the conclusion that the best solution is a densified thick multiple layers-SiO2-BPSG (4wt. % P, 11wt.%B)-SiO2. The densification treatment used is compatible with the aluminum metalization process.

UR - https://www.scopus.com/pages/publications/0033354093

M3 - Paper

AN - SCOPUS:0033354093

SP - 523

EP - 526

T2 - Proceedings of the 1999 International Semiconductor Conference (CAS '99)

Y2 - 5 October 1999 through 9 October 1999

ER -

Preparation and optical characterization of APCVD BPSG thin films used for micromachining applications

Abstract

Conference

UN SDGs

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