Preparation and Properties of Pbtio3 and Pb(Sco.5Tao.5)O3 Thin Films by Sol-Gel Processing

  • A. Patel
  • , N. M. Shorrocks
  • , R. W. Whatmore

Research output: Other outputpeer-review

Abstract

Crack-free and dense PbTiO3 films 1-2 μm thick were prepared by spinning a sol-gel derived solution onto an appropriate substrate, and firing and annealing the film at temperatures of 750-800°C. The electrical properties of the films were studied as a function of temperature, frequency and dc bias. Also, crack-free films of Pb(Sc0.5Ta0.5)O3 with an average grain size of 0.4 μm were prepared using a novel two-stage process. Films 4 μm thick had moderately high relative permittivities, low dissipation factors and high resistivity.

Original languageEnglish
Number of pages5
Edition6
Volume38
DOIs
Publication statusPublished - Nov 1991

Publication series

NameIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISSN (Print)0885-3010

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