Abstract
The process-dependent defectivity of p-n junctions was investigated through the measurement of the avalanche triggering rate of single-photon avalanche diodes used as process probes. A non-linear dependence of the ignition rate with the area of circular junctions is reported, which can be ascribed to a non-uniform density of the thermal generation centers, due to gettering. This has been verified by means of microscopic inspection and comparison with other available data. Technological hints are finally derived to counteract this non-uniformity.
| Original language | English |
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| Pages | I14-1 - I14-4 |
| Publication status | Published - 2000 |
| Externally published | Yes |
| Event | ICCDCS 2000: 3rd IEEE International Conference on Devices, Circuits and Systems - Cancun, Mexico Duration: 15 Mar 2000 → 17 Mar 2000 |
Conference
| Conference | ICCDCS 2000: 3rd IEEE International Conference on Devices, Circuits and Systems |
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| City | Cancun, Mexico |
| Period | 15/03/00 → 17/03/00 |
