@inbook{4d33be4803c5439ebe0bd9b6058fefb8,
title = "Problems of N-type doped regions in germanium, their solutions, and how to beat the ITRS roadmap",
abstract = "In this paper the authors discuss the issues surrounding the formation of ultrashallow n-type junctions in Ge. In general the n-type dopants are relatively difficult to activate and diffuse quickly, leading to high access resistances and limited capability to reduce the device dimensions, respectively. Sheet resistance (Rs) was calculated for n-type box-like profiles in Si and Ge. To achieve ITRS Roadmap targets in Si an active doping concentration of 1.5-2×1020 cm-3 is required, but due to the enhanced electron mobility it is predicted approximately 6×1019 cm-3 is sufficient in Ge.",
author = "R. Duffy and M. Shayesteh and M. White and J. Kearney and Kelleher, \{A. M.\}",
year = "2011",
doi = "10.1149/1.3568860",
language = "English",
isbn = "9781566778633",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "185--192",
booktitle = "Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications",
address = "United States",
edition = "2",
}