Processing of germanium for integrated circuits

Research output: Contribution to journalReview articlepeer-review

Abstract

In this review paper the authors will focus on Ge processing for integrated circuits. The key areas that require the most attention are substrates and integration, gate dielectrics, and access resistance. We will discuss each of these topics in turn, while also reviewing the most scaled Ge field-effect-transistor devices, and consider how modelling activities have matured for Ge in recent years.

Original languageEnglish
Pages (from-to)463-477
Number of pages15
JournalTurkish Journal of Physics
Volume38
Issue number3
DOIs
Publication statusPublished - 2014

Keywords

  • Dielectrics
  • Field-effect-transistors
  • Germanium
  • Integration
  • Processing
  • Resistance
  • Semiconductors
  • Substrates

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