Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks

E. Caruso; J. Lin; K. F. Burke; K. Cherkaoui; D. Esseni; F. Gity; S. Monaghan; P. Palestra; P. Hurley; L. Selmi

doi:10.1109/ULIS.2018.8354757

Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al₂O₃/InGaAs stacks

E. Caruso
, J. Lin
, K. F. Burke
, K. Cherkaoui
, D. Esseni
, F. Gity
, S. Monaghan
, P. Palestra
, P. Hurley
, L. Selmi

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

This paper reports physics based TCAD simulations of multi-frequency C-V curves of In0.53Ga0.47As MOSCAPs including the AC response of the border traps. The calculations reproduce the experimental inversion and accumulation capacitance versus frequency, and provide a means to profile the space and energy density of states of border traps. A sensitivity analysis of the results to border traps' distribution is carried out changing the trap volume and the oxide capacitance.

Original language	English
Title of host publication	2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
Editors	Viktor Sverdlov, Carlos Sampedro, Luca Donetti, Francisco Gamiz
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-4
Number of pages	4
ISBN (Electronic)	9781538648117
DOIs	https://doi.org/10.1109/ULIS.2018.8354757
Publication status	Published - 3 May 2018
Event	2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018 - Granada, Spain Duration: 19 Mar 2018 → 21 Mar 2018

Publication series

Name	2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
Volume	2018-January

Conference

Conference	2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018
Country/Territory	Spain
City	Granada
Period	19/03/18 → 21/03/18

Keywords

border traps
C-V
III-V compounds
parameter extraction
TCAD simulation
trap volume

Access to Document

10.1109/ULIS.2018.8354757

Cite this

Caruso, E., Lin, J., Burke, K. F., Cherkaoui, K., Esseni, D., Gity, F., Monaghan, S., Palestra, P., Hurley, P., & Selmi, L. (2018). Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al₂O₃/InGaAs stacks. In V. Sverdlov, C. Sampedro, L. Donetti, & F. Gamiz (Eds.), 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018 (pp. 1-4). (2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018; Vol. 2018-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ULIS.2018.8354757

Caruso, E. ; Lin, J. ; Burke, K. F. et al. / Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al₂O₃/InGaAs stacks. 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018. editor / Viktor Sverdlov ; Carlos Sampedro ; Luca Donetti ; Francisco Gamiz. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1-4 (2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018).

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title = "Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al2O3/InGaAs stacks",

abstract = "This paper reports physics based TCAD simulations of multi-frequency C-V curves of In0.53Ga0.47As MOSCAPs including the AC response of the border traps. The calculations reproduce the experimental inversion and accumulation capacitance versus frequency, and provide a means to profile the space and energy density of states of border traps. A sensitivity analysis of the results to border traps' distribution is carried out changing the trap volume and the oxide capacitance.",

keywords = "border traps, C-V, III-V compounds, parameter extraction, TCAD simulation, trap volume",

author = "E. Caruso and J. Lin and Burke, \{K. F.\} and K. Cherkaoui and D. Esseni and F. Gity and S. Monaghan and P. Palestra and P. Hurley and L. Selmi",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018 ; Conference date: 19-03-2018 Through 21-03-2018",

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doi = "10.1109/ULIS.2018.8354757",

language = "English",

series = "2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018",

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Caruso, E, Lin, J, Burke, KF, Cherkaoui, K, Esseni, D, Gity, F , Monaghan, S, Palestra, P, Hurley, P & Selmi, L 2018, Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al₂O₃/InGaAs stacks. in V Sverdlov, C Sampedro, L Donetti & F Gamiz (eds), 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018. 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018, vol. 2018-January, Institute of Electrical and Electronics Engineers Inc., pp. 1-4, 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018, Granada, Spain, 19/03/18. https://doi.org/10.1109/ULIS.2018.8354757

Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al₂O₃/InGaAs stacks. / Caruso, E.; Lin, J.; Burke, K. F. et al.
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018. ed. / Viktor Sverdlov; Carlos Sampedro; Luca Donetti; Francisco Gamiz. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-4 (2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018; Vol. 2018-January).

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

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AU - Esseni, D.

AU - Gity, F.

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AU - Hurley, P.

AU - Selmi, L.

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N2 - This paper reports physics based TCAD simulations of multi-frequency C-V curves of In0.53Ga0.47As MOSCAPs including the AC response of the border traps. The calculations reproduce the experimental inversion and accumulation capacitance versus frequency, and provide a means to profile the space and energy density of states of border traps. A sensitivity analysis of the results to border traps' distribution is carried out changing the trap volume and the oxide capacitance.

AB - This paper reports physics based TCAD simulations of multi-frequency C-V curves of In0.53Ga0.47As MOSCAPs including the AC response of the border traps. The calculations reproduce the experimental inversion and accumulation capacitance versus frequency, and provide a means to profile the space and energy density of states of border traps. A sensitivity analysis of the results to border traps' distribution is carried out changing the trap volume and the oxide capacitance.

KW - border traps

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KW - III-V compounds

KW - parameter extraction

KW - TCAD simulation

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DO - 10.1109/ULIS.2018.8354757

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T3 - 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

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BT - 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018

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A2 - Sampedro, Carlos

A2 - Donetti, Luca

A2 - Gamiz, Francisco

PB - Institute of Electrical and Electronics Engineers Inc.

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Caruso E, Lin J, Burke KF, Cherkaoui K, Esseni D, Gity F et al. Profiling border-traps by TCAD analysis of multifrequency CV-curves in Al₂O₃/InGaAs stacks. In Sverdlov V, Sampedro C, Donetti L, Gamiz F, editors, 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-4. (2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2018). doi: 10.1109/ULIS.2018.8354757