Programmed electrophoretic assembly and heterogeneous integration of optoelectronic devices at silicon substrates

Research output: Contribution to journalArticlepeer-review

Abstract

A novel technique for programmed integration of multiple GaAs based optoelectronic devices that exploits the response of these components to DC electric fields applied in nonaqueous solvents as a means to achieve their field assisted transport and site-selective localization has been developed. Application of the technique to heterogeneous integration of 50 and 80 micron diameter 650nm emission GaAs based LEDs at silicon substrates is demonstrated.

Original languageEnglish
Pages (from-to)201-204
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2001
EventIEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
Duration: 2 Dec 20015 Dec 2001

Fingerprint

Dive into the research topics of 'Programmed electrophoretic assembly and heterogeneous integration of optoelectronic devices at silicon substrates'. Together they form a unique fingerprint.

Cite this