Abstract
A novel technique for programmed integration of multiple GaAs based optoelectronic devices that exploits the response of these components to DC electric fields applied in nonaqueous solvents as a means to achieve their field assisted transport and site-selective localization has been developed. Application of the technique to heterogeneous integration of 50 and 80 micron diameter 650nm emission GaAs based LEDs at silicon substrates is demonstrated.
| Original language | English |
|---|---|
| Pages (from-to) | 201-204 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| Publication status | Published - 2001 |
| Event | IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States Duration: 2 Dec 2001 → 5 Dec 2001 |