Properties of GaAs/AlGaAs quantum wells grown by MOVPE using vicinal GaAs substrates

Alok Rudra; Emanuele Pelucchi; Daniel Y. Oberli; Nicolas Moret; Benjamin Dwir; Eli Kapon

doi:10.1016/j.jcrysgro.2004.09.047

Properties of GaAs/AlGaAs quantum wells grown by MOVPE using vicinal GaAs substrates

Alok Rudra
, Emanuele Pelucchi
, Daniel Y. Oberli
, Nicolas Moret
, Benjamin Dwir
, Eli Kapon

Swiss Federal Institute of Technology Lausanne

Research output: Contribution to journal › Article › peer-review

Abstract

Low-temperature photoluminescence (PL) was used to optimize the structural and optical quality of 2-15nm thick GaAs/AlGaAs quantum wells (QWs). GaAs wafers, misoriented off (100) towards « 1 1 1» A and «111» were used, covering the 0-0.6° misorientation range in steps of 0.1°. A dramatic reduction in the 10 K PL linewidth is observed for all 0.2-0.3° misorientations, as compared to nominally oriented wafers: on 2, 5 and 15nm thick QWs, linewidths fall from 23, 8 and 3meV to 6, 3 and 2.5meV, respectively, among the narrowest reported to date for similar structures. Above 0.3° misorientation, the emission broadens to become, at 0.6°, comparable or worse than for the exact (100) samples. The 4 K electron mobility of two-dimensional electron gases grown on similar, misoriented substrates increases steadily and then decreases again at larger misorientations.

Original language	English
Pages (from-to)	615-620
Number of pages	6
Journal	Journal of Crystal Growth
Volume	272
Issue number	1-4 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.09.047
Publication status	Published - 10 Dec 2004
Externally published	Yes

Keywords

A3. Metalorganic vapor phase epitaxy
A3. Quantum wells
Al. Crystal morphology
Al. Interface
B2. Semiconducting III-V materials

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10.1016/j.jcrysgro.2004.09.047

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@article{b293ff31d159406a9b07757b714b62a8,

title = "Properties of GaAs/AlGaAs quantum wells grown by MOVPE using vicinal GaAs substrates",

abstract = "Low-temperature photoluminescence (PL) was used to optimize the structural and optical quality of 2-15nm thick GaAs/AlGaAs quantum wells (QWs). GaAs wafers, misoriented off (100) towards « 1 1 1» A and «111» were used, covering the 0-0.6° misorientation range in steps of 0.1°. A dramatic reduction in the 10 K PL linewidth is observed for all 0.2-0.3° misorientations, as compared to nominally oriented wafers: on 2, 5 and 15nm thick QWs, linewidths fall from 23, 8 and 3meV to 6, 3 and 2.5meV, respectively, among the narrowest reported to date for similar structures. Above 0.3° misorientation, the emission broadens to become, at 0.6°, comparable or worse than for the exact (100) samples. The 4 K electron mobility of two-dimensional electron gases grown on similar, misoriented substrates increases steadily and then decreases again at larger misorientations.",

keywords = "A3. Metalorganic vapor phase epitaxy, A3. Quantum wells, Al. Crystal morphology, Al. Interface, B2. Semiconducting III-V materials",

author = "Alok Rudra and Emanuele Pelucchi and Oberli, \{Daniel Y.\} and Nicolas Moret and Benjamin Dwir and Eli Kapon",

year = "2004",

month = dec,

day = "10",

doi = "10.1016/j.jcrysgro.2004.09.047",

language = "English",

volume = "272",

pages = "615--620",

journal = "Journal of Crystal Growth",

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number = "1-4 SPEC. ISS.",

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TY - JOUR

T1 - Properties of GaAs/AlGaAs quantum wells grown by MOVPE using vicinal GaAs substrates

AU - Rudra, Alok

AU - Pelucchi, Emanuele

AU - Oberli, Daniel Y.

AU - Moret, Nicolas

AU - Dwir, Benjamin

AU - Kapon, Eli

PY - 2004/12/10

Y1 - 2004/12/10

N2 - Low-temperature photoluminescence (PL) was used to optimize the structural and optical quality of 2-15nm thick GaAs/AlGaAs quantum wells (QWs). GaAs wafers, misoriented off (100) towards « 1 1 1» A and «111» were used, covering the 0-0.6° misorientation range in steps of 0.1°. A dramatic reduction in the 10 K PL linewidth is observed for all 0.2-0.3° misorientations, as compared to nominally oriented wafers: on 2, 5 and 15nm thick QWs, linewidths fall from 23, 8 and 3meV to 6, 3 and 2.5meV, respectively, among the narrowest reported to date for similar structures. Above 0.3° misorientation, the emission broadens to become, at 0.6°, comparable or worse than for the exact (100) samples. The 4 K electron mobility of two-dimensional electron gases grown on similar, misoriented substrates increases steadily and then decreases again at larger misorientations.

AB - Low-temperature photoluminescence (PL) was used to optimize the structural and optical quality of 2-15nm thick GaAs/AlGaAs quantum wells (QWs). GaAs wafers, misoriented off (100) towards « 1 1 1» A and «111» were used, covering the 0-0.6° misorientation range in steps of 0.1°. A dramatic reduction in the 10 K PL linewidth is observed for all 0.2-0.3° misorientations, as compared to nominally oriented wafers: on 2, 5 and 15nm thick QWs, linewidths fall from 23, 8 and 3meV to 6, 3 and 2.5meV, respectively, among the narrowest reported to date for similar structures. Above 0.3° misorientation, the emission broadens to become, at 0.6°, comparable or worse than for the exact (100) samples. The 4 K electron mobility of two-dimensional electron gases grown on similar, misoriented substrates increases steadily and then decreases again at larger misorientations.

KW - A3. Metalorganic vapor phase epitaxy

KW - A3. Quantum wells

KW - Al. Crystal morphology

KW - Al. Interface

KW - B2. Semiconducting III-V materials

UR - https://www.scopus.com/pages/publications/9944246994

U2 - 10.1016/j.jcrysgro.2004.09.047

DO - 10.1016/j.jcrysgro.2004.09.047

M3 - Article

AN - SCOPUS:9944246994

SN - 0022-0248

VL - 272

SP - 615

EP - 620

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4 SPEC. ISS.

ER -

Properties of GaAs/AlGaAs quantum wells grown by MOVPE using vicinal GaAs substrates

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Keywords

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