Properties of rf-sputtered indium-tin-oxynitride thin films

Elias Aperathitis; Marcus Bender; Volker Cimalla; Gernot Ecke; Mircea Modreanu

doi:10.1063/1.1582368

Properties of rf-sputtered indium-tin-oxynitride thin films

Elias Aperathitis
, Marcus Bender
, Volker Cimalla
, Gernot Ecke
, Mircea Modreanu

Research output: Contribution to journal › Article › peer-review

Abstract

The properties of the rf-sputtered indium-tin-oxynitride (ITON) thin films were analyzed. The microstructure of ITON films was found to be dependent on the nitrogen concentration in the plasma. The absorption edge of the ITON films deposited in pure N₂ plasma was shifted towards higher energies and showed reduced infrared reflectance.

Original language	English
Pages (from-to)	1258-1266
Number of pages	9
Journal	Journal of Applied Physics
Volume	94
Issue number	2
DOIs	https://doi.org/10.1063/1.1582368
Publication status	Published - 15 Jul 2003

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https://hdl.handle.net/10468/4236Licence: CC BY-NC-ND

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@article{6b64d9cd7c1b4eb5a17ae292467da673,

title = "Properties of rf-sputtered indium-tin-oxynitride thin films",

abstract = "The properties of the rf-sputtered indium-tin-oxynitride (ITON) thin films were analyzed. The microstructure of ITON films was found to be dependent on the nitrogen concentration in the plasma. The absorption edge of the ITON films deposited in pure N2 plasma was shifted towards higher energies and showed reduced infrared reflectance.",

author = "Elias Aperathitis and Marcus Bender and Volker Cimalla and Gernot Ecke and Mircea Modreanu",

year = "2003",

month = jul,

day = "15",

doi = "10.1063/1.1582368",

language = "English",

volume = "94",

pages = "1258--1266",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "2",

}

TY - JOUR

T1 - Properties of rf-sputtered indium-tin-oxynitride thin films

AU - Aperathitis, Elias

AU - Bender, Marcus

AU - Cimalla, Volker

AU - Ecke, Gernot

AU - Modreanu, Mircea

PY - 2003/7/15

Y1 - 2003/7/15

N2 - The properties of the rf-sputtered indium-tin-oxynitride (ITON) thin films were analyzed. The microstructure of ITON films was found to be dependent on the nitrogen concentration in the plasma. The absorption edge of the ITON films deposited in pure N2 plasma was shifted towards higher energies and showed reduced infrared reflectance.

AB - The properties of the rf-sputtered indium-tin-oxynitride (ITON) thin films were analyzed. The microstructure of ITON films was found to be dependent on the nitrogen concentration in the plasma. The absorption edge of the ITON films deposited in pure N2 plasma was shifted towards higher energies and showed reduced infrared reflectance.

UR - https://www.scopus.com/pages/publications/0042266452

U2 - 10.1063/1.1582368

DO - 10.1063/1.1582368

M3 - Article

AN - SCOPUS:0042266452

SN - 0021-8979

VL - 94

SP - 1258

EP - 1266

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -

Properties of rf-sputtered indium-tin-oxynitride thin films

Abstract

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