Pulsed-Laser Induced Single-Event Transients in InGaAs FinFETs on Bulk Silicon Substrates

The pulsed-laser single-event transient response of InGaAs FinFETs on bulk silicon substrates is investigated. Charge collection due to a source-drain shunt effect and drain-to-substrate junction charge collection contribute to the observed transients. The transient response of these silicon substrate devices is compared to that of InGaAs FinFETs on semi-insulating substrates. Faster transients with reduced peak currents and peak widths are observed on the silicon substrate devices. Simulations show hole collection by the silicon substrate. This reduces the amount of source-barrier lowering and bipolar-amplification relative to other III-V devices. Moreover, the reduced hole lifetime in the GaAs buffer layer also contributes to the relative reduction of the bipolar amplification in these devices.