@inproceedings{7936fc8e979a496bb2ba37aaba57dea2,
title = "Pushing the limits of silicon transistors",
abstract = "In this work we study Ge transistor structures grown on silicon substrate. We use photoluminescence to determine the band gap of Ge under tensile strain. The strain is induced by growing Ge on an InGaAs buffer layer with variable In content. The band energy levels are modeled using a 30 band k·p model based on first principles calculations. Photoluminescence measurements show a reasonable correspondence with calculated values of the band energies.",
keywords = "Biaxial strain Ge, Ge InGaAs, Ge k.p, Ge photoluminescence, Ge Si, Ge TFET, Silicon photonics, Tensile Ge",
author = "Dzianis Saladukha and Ochalski, \{Tomasz J.\} and Felipe Murphy-Armando and Clavel, \{Michael B.\} and Hudait, \{Mantu K.\}",
note = "Publisher Copyright: {\textcopyright} COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.; Physics and Simulation of Optoelectronic Devices XXIV ; Conference date: 15-02-2016 Through 18-02-2016",
year = "2016",
doi = "10.1117/12.2209606",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Yasuhiko Arakawa and Bernd Witzigmann and Marek Osinski",
booktitle = "Physics and Simulation of Optoelectronic Devices XXIV",
address = "United States",
}